Power MOSFET
LESHAN RADIO COMPANY, LTD.
Power MOSFET
20 V, 285 mA, N−Channel with ESD Protection, SOT−723
Features
• Enables High ...
Description
LESHAN RADIO COMPANY, LTD.
Power MOSFET
20 V, 285 mA, N−Channel with ESD Protection, SOT−723
Features
Enables High Density PCB Manufacturing 44% Smaller Footprint than SC−89 and 38% Thinner than SC−89 Low Voltage Drive Makes this Device Ideal for Portable Equipment Low Threshold Levels, VGS(TH) < 1.3 V Low Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin
Environments such as Portable Electronics
Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels Using the Same Basic Topology
These are Pb−Free Devices S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
Applications
Interfacing, Switching High Speed Switching Cellular Phones, PDAs
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current (Note 1)
Power Dissipation (Note 1)
Steady State
tv5s Steady State
tv5s
TA = 25°C TA = 85°C TA = 25°C
TA = 25°C
VDSS VGS ID
PD
20 V ±10 V 255 185 mA 285 440
mW 545
Continuous Drain Current (Note 2)
Power Dissipation (Note 2)
Steady State
TA = 25°C TA = 85°C TA = 25°C
ID PD
210 mA
155
310 mW
Pulsed Drain Current
tp = 10 ms
IDM
Operating Junction and Storage Temperature TJ, TSTG
400
−55 to 150
mA °C
Source Current (Body Diode) (Note 2)
IS 286 mA
Lead Temperature for Soldering Purposes (1/8” from case for 10 seconds...
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