Ordering number:ENN5810
PNP/NPN Epitaxial Planar Silicon Transistors
CPH6102/CPH6202
High-Current Switching Applicatio...
Ordering number:ENN5810
PNP/
NPN Epitaxial Planar Silicon
Transistors
CPH6102/CPH6202
High-Current Switching Applications
Applications
· DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes.
Package Dimensions
unit:mm 2146A
[CPH6102/6202]
2.9 6 5 4
0.6
Features
· Adoption of FBET, MBIT processes. · High current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall package permitting applied sets to be made small and slim (0.9mm). · High allowable power dissipation.
0.05
1.6 2.8
1
2
( ) : CPH6102
0.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Mounted on a ceramic board (600mm2×0.8mm)
Conditions
0.7 0.9
0.2
3 0.95
0.6
1 : Collector 2 : Collector 3 : Base 4 : Emitter 5 : Collector 6 : Collector SANYO : CPH6
Ratings (–)60 (–)50 (–)5 (–)1.0 (–)2 1.3 150 –55 to +150
0.2
0.15
Unit V V V A A W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob VCB=(–)50V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)100mA VCE=(–)2V, IC=(–)1A VCE=(–)10V, IC=(–)50mA VCB=(–)10V, f=1MHz 200 30 150 (12)8.5 MHz pF Conditions Ratings min typ max (–)100 ...
