Document
LESHAN RADIO COMPANY, LTD.
30V P-Channel Enhancement-Mode MOSFET
LP3401LT1G S-LP3401LT1G
VDS (V) = -30V
RDS(ON) < 70mΩ (VGS = -10V) RDS(ON) < 80mΩ (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -2.5V)
FEATURES Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
ORDERING INFORMATION
Device
LP3401LT1G S-LP3401LT1G
LP3401LT3G S-LP3401LT3G
Marking
A1
A1
Shipping
3000/Tape&Reel
10000/Tape&Reel
3
1 2
SOT– 23 (TO–236AB)
3D
G 1 S 2
MAXIMUM RATINGS (TA = 25oC unless otherwise noted)
Parameter Drain-Source Voltage
Gate-Source Voltage
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
TA=25°C Power Dissipation A TA=70°C
Junction and Storage Temperature Range
Symbol VDS VGS
ID IDM
PD
TJ, TSTG
Maximum -30 ±12 -4.2 -3.5 -30 1.4 1
-55 to 150
Units V V
A
W °C
THERMAL CHARACTERISTICS (TA = 25oC unless otherwise noted)
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJL
Typ 65 85 43
Max 90 125 60
Units °C/W °C/W °C/W
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
Rev .O 1/5
LESHAN RADIO COMPANY, LTD.
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS VGS(th) ID(ON)
Gate-Body leakage current Gate Threshold Voltage On state drain current
ID=-250µA, VGS=0V VDS=-24V, VGS=0V
VDS=0V, VGS=±12V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V
TJ=55°C
RDS(ON)
gFS VSD IS
VGS=-10V, ID=-4.2A
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-4A
VGS=-2.5V, ID=-1A
Forward Transconductance
VDS=-5V, ID=-5A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=-4.5V, VDS=-15V, ID=-4A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=-10V, VDS=-15V, RL=3.6Ω,
tD(off)
Turn-Off DelayTime
RGEN=6Ω
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=-4A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs
Min -30
-0.7 -25
7
Typ Max Units
-1 -5 ±100 -1 -1.3
11 -0.75
70 80 120
-1 -2.2
V
µA
nA V A
mΩ
mΩ mΩ S V A
954 pF 115 pF 77 pF
6Ω
9.4 nC 2 nC 3 nC 6.3 ns 3.2 ns 38.2 ns 12 ns 20.2 ns 11.2 nC
Rev .O 2/5
-ID (A)
LESHAN RADIO COMPANY, LTD.
LP3401LT1G , S-LP3401LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
25.00 20.00
-10V
15.00
10.00
-4.5V
-3V -2.5V
5.00
VGS=-2V
0.00 0.00
1.00 2.00 3.00 4.00
-VDS (Volts) Fig 1: On-Region Characteristics
5.00
120
100
80 VGS=-2.5V
60 VGS=-4.5V
40 VGS=-10V
20 0.00 2.00 4.00 6.00 8.00 10.00 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
190
170
150 ID=-2A 130
110
90 125°C
70
50 25°C 30
10 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
-IS (A)
Normalized On-Resistance
-ID(A)
10
VDS=-5V 8
6 4 125°C 2 25°C
0 0 0.5 1 1.5 2 2.5 3
-VGS(Volts) Figure 2: Transfer Characteristics
1.8
1.6 ID=-3.5A, VGS=-4.5V ID=-3.5A, VGS=-10V
1.4
1.2 VGS=-2.5V ID=-1A
1
0.8 0
25 50 75 100 125 150
Temperature (°C) Figure 4: On-Resistance vs. Junction
Temperature
175
1.0E+01
1.0E+00
1.0E-01 1.0E-02
125°C
1.0E-03 1.0E-04
25°C
1.0E-05
1.0E-06 0.0
0.2 0.4 0.6 0.8 1.0
-VSD (Volts) Figure 6: Body-Diode Characteristics
1.2
RDS(ON) (mΩ)
RDS(ON) (mΩ)
Rev .O 3/5
-VGS (Volts)
LESHAN RADIO COMPANY, LTD.
LP3401LT1G , S-LP3401LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
5 VDS=-15V ID=-4A
4
3
2
1
0 0 2 4 6 8 10 12 -Qg (nC) Figure 7: Gate-Charge Characteristics
Capacitance (pF)
1400
1200
1000 800
Ciss
600
400
200
Coss
Crss
0 0 5 10 15 20 25
-VDS (Volts) Figure 8: Capacitance Characteristics
30
100.0 TJ(Max)=150°C TA=25°C
RDS(ON) 10.0 limited
10µs 100µs
1ms
0.1s 10ms 1.0
1s
0.1 0.1
10s DC
1 10 -VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
100
Power (W)
40 TJ(Max)=150°C TA=25°C
30
20
10
0 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W
1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01 0.00001
0.0001
PD
Single Pulse
Ton T
0.001
0.