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LP3401LT1G Dataheets PDF



Part Number LP3401LT1G
Manufacturers LRC
Logo LRC
Description P-Channel MOSFET
Datasheet LP3401LT1G DatasheetLP3401LT1G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET LP3401LT1G S-LP3401LT1G VDS (V) = -30V RDS(ON) < 70mΩ (VGS = -10V) RDS(ON) < 80mΩ (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -2.5V) FEATURES Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION Device LP3401LT1G S-LP3401LT1G LP3401LT3G S-L.

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LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET LP3401LT1G S-LP3401LT1G VDS (V) = -30V RDS(ON) < 70mΩ (VGS = -10V) RDS(ON) < 80mΩ (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -2.5V) FEATURES Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION Device LP3401LT1G S-LP3401LT1G LP3401LT3G S-LP3401LT3G Marking A1 A1 Shipping 3000/Tape&Reel 10000/Tape&Reel 3 1 2 SOT– 23 (TO–236AB) 3D G 1 S 2 MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ, TSTG Maximum -30 ±12 -4.2 -3.5 -30 1.4 1 -55 to 150 Units V V A W °C THERMAL CHARACTERISTICS (TA = 25oC unless otherwise noted) Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 65 85 43 Max 90 125 60 Units °C/W °C/W °C/W A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. Rev .O 1/5 LESHAN RADIO COMPANY, LTD. ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current ID=-250µA, VGS=0V VDS=-24V, VGS=0V VDS=0V, VGS=±12V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V TJ=55°C RDS(ON) gFS VSD IS VGS=-10V, ID=-4.2A Static Drain-Source On-Resistance VGS=-4.5V, ID=-4A VGS=-2.5V, ID=-1A Forward Transconductance VDS=-5V, ID=-5A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge VGS=-4.5V, VDS=-15V, ID=-4A Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=3.6Ω, tD(off) Turn-Off DelayTime RGEN=6Ω tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-4A, dI/dt=100A/µs Qrr Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs Min -30 -0.7 -25 7 Typ Max Units -1 -5 ±100 -1 -1.3 11 -0.75 70 80 120 -1 -2.2 V µA nA V A mΩ mΩ mΩ S V A 954 pF 115 pF 77 pF 6Ω 9.4 nC 2 nC 3 nC 6.3 ns 3.2 ns 38.2 ns 12 ns 20.2 ns 11.2 nC Rev .O 2/5 -ID (A) LESHAN RADIO COMPANY, LTD. LP3401LT1G , S-LP3401LT1G TYPICAL ELECTRICAL CHARACTERISTICS 25.00 20.00 -10V 15.00 10.00 -4.5V -3V -2.5V 5.00 VGS=-2V 0.00 0.00 1.00 2.00 3.00 4.00 -VDS (Volts) Fig 1: On-Region Characteristics 5.00 120 100 80 VGS=-2.5V 60 VGS=-4.5V 40 VGS=-10V 20 0.00 2.00 4.00 6.00 8.00 10.00 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 190 170 150 ID=-2A 130 110 90 125°C 70 50 25°C 30 10 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage -IS (A) Normalized On-Resistance -ID(A) 10 VDS=-5V 8 6 4 125°C 2 25°C 0 0 0.5 1 1.5 2 2.5 3 -VGS(Volts) Figure 2: Transfer Characteristics 1.8 1.6 ID=-3.5A, VGS=-4.5V ID=-3.5A, VGS=-10V 1.4 1.2 VGS=-2.5V ID=-1A 1 0.8 0 25 50 75 100 125 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 175 1.0E+01 1.0E+00 1.0E-01 1.0E-02 125°C 1.0E-03 1.0E-04 25°C 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 RDS(ON) (mΩ) RDS(ON) (mΩ) Rev .O 3/5 -VGS (Volts) LESHAN RADIO COMPANY, LTD. LP3401LT1G , S-LP3401LT1G TYPICAL ELECTRICAL CHARACTERISTICS 5 VDS=-15V ID=-4A 4 3 2 1 0 0 2 4 6 8 10 12 -Qg (nC) Figure 7: Gate-Charge Characteristics Capacitance (pF) 1400 1200 1000 800 Ciss 600 400 200 Coss Crss 0 0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 100.0 TJ(Max)=150°C TA=25°C RDS(ON) 10.0 limited 10µs 100µs 1ms 0.1s 10ms 1.0 1s 0.1 0.1 10s DC 1 10 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 100 Power (W) 40 TJ(Max)=150°C TA=25°C 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to- Ambient (Note E) 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 0.00001 0.0001 PD Single Pulse Ton T 0.001 0.


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