S-LP3401LT1G

LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET LP3401LT1G S-LP3401LT1G VDS (V) = -30V RDS(ON) < 70mΩ (VGS = -10V) RDS(ON) < 80mΩ (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -2.5V) FEATURES Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION Device LP3401LT1G S-LP3401LT1G LP3401LT3G S-LP3401LT3G Marking A1 A1 Shipping 3000/Tape&Reel 10000/Tape&Reel 3 1 2 SOT– 23 (TO–236AB) 3D G 1 S 2 MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ, TSTG Maximum -30 ±12 -4.2 -3.5 -30 1.4 1 -55 to 150 Units V V A W °C THERMAL CHARACTERISTICS (TA = 25oC unless otherwise noted) Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 65 85 43 Max 90 125 60 Units °C/W °C/W °C/W A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance ratin...