FS50ASJ-03F

FS50ASJ-03F High-Speed Switching Use Nch Power MOS FET Features Drive Voltage : 4V VDSS : 30 V rDS(ON) (max) : 12.2 mΩ ID : 50 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Outline RENESAS Package code: PRSS0004ZG-A (Package name: MP-3A) 2, 4 4 12 3 1 3 Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. Maximum Ratings Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulse) Avalanche current (Pulse) Source current Source current (Pulse) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — Ratings 30 ±20 50 200 50 50 200 50 – 55 to + 150 – 55 to + 150 0.32 REJ03G0238-0200 Rev.2.00 Dec 19, 2008 1. Gate 2. Drain 3. Source 4. Drain Unit V V A A A A A W °C °C g (Tc = 25 °C) Conditions VGS = 0 V VDS = 0 V L = 6 µH Typical value REJ03G0238-0200 Rev.2.00 Dec 19, 2008 Page 1 of 6 FS50ASJ-03F Electrical Characteristics Parameter Drain-source breakdown voltage Gate-source breakdown voltage Drain-source leakage current Gate-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Diode reverse recovery time Symbol V(BR)DSS V(BR)GSS ...