Silicon N-Channel MOS FET
H5N5005PL
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance: RDS(on) = 0.070 Ω typ. • L...
Description
H5N5005PL
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance: RDS(on) = 0.070 Ω typ. Low leakage current: IDSS = 10 µA max (at VDS = 500 V) High speed switching: tf = 300 ns typ (at VGS = 10 V, ID = 30 A, RL = 8.33 Ω) Low gate charge: Qg = 300 nC typ (at VDD = 400 V, VGS = 10 V, ID = 60 A) Avalanche ratings Built-in fast recovery diode: trr = 220 ns typ
Outline
RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL)
D
REJ03G0419-0400 Rev.4.00
May 13, 2009
1 2 3
G
Absolute Maximum Ratings
Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C
Symbol
VDSS
VGSS
ID ID (pulse) Note1
IDR IDR (pulse) Note1
IAP Note3 Pch Note2
θch-c Tch
Tstg
1. Gate 2. Drain (Flange) 3. Source
S
Ratings 500 ±30 60 240 60 240 30 270 0.463 150
–55 to +150
(Ta = 25°C)
Unit V V A A A A A W
°C/W °C °C
REJ03G0419-0400 Rev.4.00 May 13, 2009 Page 1 of 6
H5N5005PL
Electrical Characteristics
Item Drain to Source breakdown voltage Zero Gate voltage Drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capa...
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