CPH6302

Ordering number:EN5939 P-Channel MOS Silicon FET CPH6302 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2151 [CPH6302] 6 5 4 0.6 0 to 0.1 0.6 1.6 2.8 1 2 3 0.95 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% www.DataSheet4U.com 0.4 Conditions 0.7 0.9 0.2 Ratings –30 ±20 –3 –12 1.6 150 –55 to +150 0.2 2.9 0.15 Unit V V A A W ˚C ˚C Mounted on a ceramic board (900mm2×0.8mm) Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=–1mA, VGS=0 VDS=–30V, VGS=0 VGS=±16V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–1.5A ID=–1.5A, VGS=–10V ID=–0.5A, VGS=–4V VDS=–10V, f=1MHz VDS=–10V, f=1MHz VDS=–10V, f=1MHz –1.0 2.0 3.0 110 190 300 170 75 145 270 Conditions Ratings min –30 –10 ±10 –2.5 typ max Unit V µA µA V S mΩ mΩ pF pF pF Marking : JB Continued on next page. A...