Document
HAF2021(L), HAF2021(S)
Silicon N Channel MOS FET Series Power Switching
REJ03G0179-0200Z (Previous ADE-208-1459A(Z))
Rev.2.00 Mar.05.2004
Description
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
• Logic level operation (6 V Gate drive) • High endurance capability against to the short circuit • Built–in the over temperature shut–down circuit • Latch type shut–down operation (Need 0 voltage recovery)
Outline
LDPAK
D
G Gate resistor
Temperature Sensing Circuit
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Latch Circuit
Gate Shut-down Circuit
S
44
1 2 3
1 2 3
1. Gate 2. Drain 3. Source 4. Drain
Rev.2.00, Mar.05.2004, page 1 of 8
HAF2021(L), HAF2021(S)
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Ta = 25°C
Symbol
VDSS VGSS VGSS ID ID(pulse)Note1 IDR Pch Note2 Tch Tstg
Typical Operation Characteristics
Item Input voltage
Input current (Gate non shut down)
Input current (Gate shut down) Shut down temperature Gate operation voltage
Symbol VIH VIL IIH1 IIH2 IIL IIH(sd)1 IIH(sd)2 Tsd VOP
Min 3.5 — — — — — — — 3.5
Typ — — — — — 0.6 0.35 175 —
Ratings 60 16 –2.5 50 100 50 100 150 –55 to +150
Max Unit —V 1.2 V 100 µA 50 µA 1 µA — mA — mA — °C 12 V
(Ta = 25°C) Unit V V V A A A W °C °C
Test Conditions
Vi = 6 V, VDS = 0 Vi = 3.5 V, VDS = 0 Vi = 1.2 V, VDS = 0 Vi = 6 V, VDS = 0 Vi = 3.5 V, VDS = 0 Channel temperature
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Rev.2.00, Mar.05.2004, page 2 of 8
HAF2021(L), HAF2021(S)
Electrical Characteristics
Item
Symbol Min Typ Max Unit
Drain current Drain current Drain to source breakdown voltage Gate to source breakdown voltage Gate to source breakdown voltage Gate to source leak current
Input current (shut down)
Zero gate voltage drain current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance
ID1 ID2 V(BR)DSS V(BR)GSS V(BR)GSS IGSS1 IGSS2 IGSS3 IGSS4 IGS(op)1 IGS(op)2 IDSS VGS(off) |yfs| RDS(on)
90 — 60 16 –2.5 — — — — — — — 2.2 15 —
— — — — — — — — — 0.6 0.35 — — 50 8
— 10 — — — 100 50 1 –100 — — 10 3.4 — 12
A mA V V V µA µA µA µA mA mA µA V S mΩ
Static drain to source on state resistance
RDS(on)
—
9.5 15
mΩ
Output capacitance
Coss —
1450 —
pF
Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time
td(on) tr td(off) tf VDF trr
— — — — — —
20 — 75 — 3— 2.6 — 0.9 — 110 —
µs µs µs µs V ns
Over load shut down operation time Note4
tos — 0.8 — ms
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