HAF2021L

HAF2021(L), HAF2021(S) Silicon N Channel MOS FET Series Power Switching REJ03G0179-0200Z (Previous ADE-208-1459A(Z)) Rev.2.00 Mar.05.2004 Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features Logic level operation (6 V Gate drive) High endurance capability against to the short circuit Built–in the over temperature shut–down circuit Latch type shut–down operation (Need 0 voltage recovery) Outline LDPAK D G Gate resistor Temperature Sensing Circuit www.DataSheet4U.com Latch Circuit Gate Shut-down Circuit S 44 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain Rev.2.00, Mar.05.2004, page 1 of 8 HAF2021(L), HAF2021(S) Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Ta = 25°C Symbol VDSS VGSS VGSS ID ID(pulse)Note1 IDR Pch Note2 Tch Tstg Typical Operation Characteristics Item Input voltage Input current (Gate non shut down) Input current (Gate shut down) Shut down temperature Gate operation voltage Symbol VIH VIL IIH1 IIH2 IIL IIH(sd)1 IIH(s...