HAT1047RJ

www.DataSheet4U.com HAT1047R, HAT1047RJ Silicon P Channel Power MOS FET High Speed Power Switching Features For Automotive Application (at Type Code "J") Low on-resistance Capable of –4.5 V gate drive High density mounting Outline REJ03G0074-0500Z (Previous ADE-208-1545D(Z)) Rev.5.00 Aug.27.2003 SOP-8 DataShe8et746U5.com 56 7 8 DD D D 1 234 4 G SSS 12 3 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain DataShee DataSheet4U.com Rev.5.00, Aug.27.2003, page 1 of 9 www.DataSheet4U.com et4U.com HAT1047R, HAT1047RJ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current HAT1047R HAT1047RJ Avalanche energy HAT1047R HAT1047RJ Channel dissipation VDSS VGSS ID ID(pulse)Note1 IDR IAP Note3 EAR Note3 Pch Note2 –30 ±20 –14 –112 –14 — –14 — 19.6 2.5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s 3. Value at Tch = 25°C, Rg ≥ 50 Ω DataSheet4U.com Unit V V A A A — A — mJ W °C °C DataShee DataSheet4U.com Rev.5.00, Aug.27.2003, page 2 of 9 www.DataSheet4U.com et4U.com HAT1047R, HAT1047RJ Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Drain to source breakdown voltage V(BR)DSS –30 Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current IGSS — Zero gate voltage drain...