Power Transistors
2SB1155
Silicon PNP epitaxial planar type
For power switching Complementary to 2SD1706
21.0±0.5
16...
Power
Transistors
2SB1155
Silicon
PNP epitaxial planar type
For power switching Complementary to 2SD1706
21.0±0.5
16.2±0.5
s Features
q Low collector to emitter saturation voltage VCE(sat) q Satisfactory linearity of foward current transfer ratio hFE q Large collector current IC q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
Symbol VCBO VCEO VEBO ICP IC
PC
Tj Tstg
Ratings –130 –80 –7 –25 –15 80 3 150
–55 to +150
Unit V V V A A
W
˚C ˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current Emitter cutoff current Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
ICBO IEBO VCEO hFE1 hFE2* hFE3 VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT ton tstg tf
VCB = –100V, IE = 0 VEB = –5V, IC = 0 IC = –10mA, IB = 0 VCE = –2V, IC = – 0.1A VCE = –2V, IC = –3A VCE = –2V, IC = –8A IC = –7A, IB = – 0.35A IC = –15A, IB = –1.5A IC = –7A, IB = – 0.35A IC = –15A, IB = –1.5A VCE = –10V, IC = – 0.5A, f = 10MHz
IC = –7A, IB1 = – 0.7A, IB2 = 0.7A, VCC = –50V
12.5 3.5 15.0±0.2 0.7
Solder Dip
Unit: mm
15.0±0.3 11.0±0.2
φ3.2±...