CPH6313

Ordering number : ENN7017 CPH6313 P-Channel Silicon MOSFET CPH6313 High-Speed Switching Applications Features Package Dimensions unit : mm 2151A [CPH6315] 6 5 4 0.6 0.2 Low ON-resistance. High-speed switching. 2.5V drive. 2.9 0.15 0.05 1.6 2.8 1 2 0.4 Specifications Absolute Maximum Ratings a t Ta=25 °C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2!0.8mm) Conditions 0.7 0.9 0.2 3 0.95 0.6 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 Ratings -20 ± 10 --4 -16 1.6 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics a t Ta=25 °C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=--1mA, VGS=0 VDS=-20V, VGS=0 VGS=± 8V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--2A ID=--2A, VGS=-4.5V ID=--1A, VGS=-2.5V Ratings min --20 --1 ± 10 --0.4 4 5.8 55 80 72 110 --1.4 typ max Unit V µA µA V S mΩ mΩ Marking : JP Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as li...