CPH6351

Ordering number : ENN6936 CPH6351 P-Channel Silicon MOSFET CPH6351 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions unit : mm 2151A [CPH6351] 0.2 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 2.9 0.15 6 5 4 0.6 0.05 1.6 2.8 1 2 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.7 0.9 0.2 3 0.95 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 0.4 0.6 Ratings --20 ± 10 --3 --12 1.6 150 --55 to +150 Unit V V A A W °C °C Mounted on a ceramic board (900mm2!0.8mm) Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=-1mA, VGS=0 VDS=--20V, VGS=0 VGS=± 8V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=-1.5A ID=-1.5A, VGS=--4V ID=-0.5A, VGS=--2.5V Ratings min --20 --10 ± 10 --0.4 3.3 4.8 90 140 120 200 --1.4 typ max Unit V µA µA V S mΩ mΩ Marking : JE Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high ...