CPH6402

Ordering number:EN5983 N-Channel MOS Silicon FET CPH6402 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2151 [CPH6402] 6 5 4 0.6 0 to 0.1 0.6 1.6 2.8 1 2 3 0.95 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.4 0.7 0.9 0.2 Ratings 30 ±24 4 16 1.6 150 –55 to +150 0.2 2.9 0.15 Unit V V A A W ˚C ˚C Mounted on a ceramic board (900mm2×0.8mm) Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=2A ID=2A, VGS=10V ID=1A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 1.0 3.0 4.3 55 110 240 160 70 75 155 Conditions Ratings min 30 10 ±10 2.4 typ max Unit V µA µA V S mΩ mΩ pF pF pF Marking : KB Continued on next page. Any and all SANYO products described or contained ...