CPH6801

Ordering number:EN6419 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH6801 DC/DC Converter Applications Features · The CPH6801 consists of a P-channel MOSFET that features low ON resistance, ultrahigh-speed switching, and low-voltage drive, and a shottky barrier diode that features short reverse recovery time and low forward voltage, therefore enabling high-density mounting. · Each device incorporated in the CPH6801 is equivalent with the 2SJ560 and the SBS004, respectively. Package Dimensions unit:mm 2172 [CPH6801] 6 5 4 0.6 0.05 1.6 2.8 0.2 2.9 0.15 1 2 3 0.95 0.2 0.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Output Current Surge Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Symbol Conditions 0.4 1 : Gate 2 : Source 3 : Anode 4 : Drain (Cathode Common) 5 : Drain (Cathode Common) 6 : Drain (Cathode Common) SANYO : CPH6 0.7 0.9 Ratings –20 ±10 –1 –4 0.9 150 –55 to +125 15 15 1 10 –55 to +125 –55 to +125 Unit V V A A W ˚C ˚C Mounted on a ceramic board (600mm2×0.8mm) V V A A ˚C ˚C Any and all SANYO products described or contained herein do not have specifications that can...