C945

C945 TRANSISTOR (NPN) FEATURE SOT-23 z Excellent hFE Linearity z Low noise z Complementary to A733 1. BASE 2. EMITTER 3. COLLECTOR MARKING:CR· MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous PC Collector Power Dissipation TJ Junction Temperature Tstg Storage Temperature Value 60 50 5 150 200 150 -55-150 Units V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Noise figure CLASSIFICATION OF hFE(1) Rank Range Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICER IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob NF Test conditions IC=100uA, IE=0 IC=1mA , IB=0 IE=0.1mA, IC=0 VCB=60V, IE=0 VCE=55V,R=10MΩ VEB=5V , IC=0 VCE=6 V , IC=1mA VCE=6 V , IC=0.1mA IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V,IC=10mA,f =30 MHz VCB=10V,IE=0,f=1MHZ VCE=6V,IC=0.1mA Rg=10kΩ,f=1kMHZ MIN TYP 60 50 5 130 40 150 4 MAX 0.1 0.1 0.1 400 UNIT V V V uA uA uA 0.3 V 1V MHz 3.0 pF 10 dB L 130-200 H 200-400 JinYu semiconductor www.htsemi.com Typical characteristics C945 JinYu semiconductor www.htsemi.com ...