CZD41C

Elektronische Bauelemente CZD41C NPN Epitaxial Planar Silicon Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Monolithic Construction With Built–in Base–Emitter Resistors Straight Lead Version in Plastic Sleeves (“–1” Suffix) Designed for General Purpose Amplifier and Low Speed S witching Applications. TO-252 (D-Pack) A BC D PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch GE 1 Base Collector 2 3 Emitter K HF MJ N O P REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 6.35 6.90 J 2.30 REF. B 4.95 5.50 K 0.64 1.14 C 2.10 2.50 M 0.50 1.14 D 0.43 0.9 N 1.3 1.8 E 6.0 7.5 O 0 0.13 F 2.80 REF P 0.58REF. G 5.40 6.40 H 0.60 1.20 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Collector to Base Voltage VCBO 100 Collector to Emitter Voltage VCEO 100 Emitter to Base Voltage VEBO 5 Collector Current IC 6 Collector Power Dissipation PC 1.25 Junction and Storage Temperature TJ,TSTG 150, -65 ~ 150 Unit V V V A W ℃ ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Min. Typ. Max. Collector-base breakdown voltage V(BR)CBO 100 - - Collector-emitter breakdown voltage VCEO(SUS) 100 - - Emitter-base breakdown voltage V(BR)EBO 5- - Collector cut-off current ICEO - - 50 Emitter cut-off current IEBO - - 0.5 DC current gain 1 Collector-emitter saturation voltage 1 Base-emitter saturation voltage 1 hFE VCE(s...