STGW30V60DF
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
D...
Description
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
Datasheet - production data
TAB
3 1
D²PAK
TAB
3 2 1
TO-220
TAB
3 2 1
TO-247
3 2 1
TO-3P
Figure 1. Internal schematic diagram
C (2, TAB)
Features
Maximum junction temperature: TJ = 175 °C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 30 A Tight parameters distribution Safe paralleling Low thermal resistance Very fast soft recovery antiparallel diode
Applications
Photovoltaic inverters Uninterruptible power supply Welding Power factor correction Very high frequency converters
G (1) Description
This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise E (3) between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Order codes STGB30V60DF STGP30V60DF STGW30V60DF STGWT30V60DF
Table 1. Device summary
Marking
Package
GB30V60DF GP30V60DF GW30V60DF GWT30V60DF
D²PAK TO-220 TO-247 TO-3P
Packaging Tape and reel
Tube Tube Tube
October 2013
This is information on a product in full production.
DocID024361 Rev 4
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Electrical ratings
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
1 Electrical ratings
Sym...
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