DIP Type
■ Features
● Schottky Barrier Chip ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Cur...
DIP Type
■ Features
●
Schottky Barrier Chip ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability
Schottky Diodes SR120 ~ SR1100
DO-41
0.107 (2.7) 0.080 (2.0)
DIA.
Diodes
1.0 (25.4) MIN.
0.205 (5.2) 0.160 (4.1)
0.034 (0.86) 0.028 (0.71)
1.0 (25.4) MIN.
Dimensions in inches and (millimeters)
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol SR120 SR130 SR140 SR150 SR160 SR180 SR1100 Unit
Repetitive Peak Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM 20 30 40 50 60 80 100
Maximum DC Blocking Voltage
VDC
V
RMS Reverse Voltag
VR(RMS)
14
21
28
35
42
56
70
Forward Voltage
VF 0.5
0.7 0.85
Average Rectified Output Current @ TL=100℃
IO
1
A
Peak Forward Surge Current @ 8.3mS
IFSM
40
Maximum DC Reverse Current Ta=25℃ Ta=100℃
IR
0.5 mA
10
Typical Junction Capacitance (Note.1)
Cj
110
80 pF
Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead
RthJA RthJL
50 ℃/W
15
Junction Temperature Storage Temperature
Tj Tstg
150 -65 to 150
℃
Note.1 Measured at 1MHz and applied reverse voltage of 4V D.C
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DIP Type
■ Typical Characterisitics
1.0 0.5
Schottky Diodes SR120 ~ SR1100
20
SR120 - SR140
10
SR150 - SR160
1.0
Diodes
IF, INSTANTANEOUS FORWARD CURRENT (A)
I(O), AVERAGE FORWARD CURRENT (A)
0 25 50 75 100 125 150 TL, LEAD TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve
40
Single Half Sine-Wave (JEDEC Method) Tj = 150°C
30
20
0.1 0.1
0.5 0.9
Tj = 2...
