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L4202S Dataheets PDF



Part Number L4202S
Manufacturers Thinki Semiconductor
Logo Thinki Semiconductor
Description Fast Recovery Epitaxial Diode
Datasheet L4202S DatasheetL4202S Datasheet (PDF)

L4204S ® L4204S Pb Pb Free Plating Product 20 Ampere,400 Volt Common Cathode Fast Recovery Epitaxial Diode APPLICATION · Freewheeling, Snubber, Clamp · Inversion Welder · PFC · Plating Power Supply · Ultrasonic Cleaner and Welder · Converter & Chopper · UPS TO-247AD/TO-3P Cathode(Bottom Side Metal Heatsink) PRODUCT FEATURE · Ultrafast Recovery Time · Soft Recovery Characteristics · Low Recovery Loss · Low Forward Voltage · High Surge Current Capability · Low Leakage Current Internal Con.

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L4204S ® L4204S Pb Pb Free Plating Product 20 Ampere,400 Volt Common Cathode Fast Recovery Epitaxial Diode APPLICATION · Freewheeling, Snubber, Clamp · Inversion Welder · PFC · Plating Power Supply · Ultrasonic Cleaner and Welder · Converter & Chopper · UPS TO-247AD/TO-3P Cathode(Bottom Side Metal Heatsink) PRODUCT FEATURE · Ultrafast Recovery Time · Soft Recovery Characteristics · Low Recovery Loss · Low Forward Voltage · High Surge Current Capability · Low Leakage Current Internal Configuration Base Backside — Anode Cathode Anode GENERAL DESCRIPTION L4204S using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic. ABSOLUTE MAXIMUM RATINGS TC=25°C unless otherwise specified Symbol Parameter Test Conditions Values Unit VR V RRM I F(AV) I F(RMS) I FSM PD TJ T STG Torque Maximum D.C. Reverse Voltage Maximum Repetitive Reverse Voltage Average Forward Current RMS Forward Current Non-Repetitive Surge Forward Current Power Dissipation Junction Temperature Storage Temperature Range Module-to-Sink TC=110°C, Per Diode TC=110°C, Per Package TC=110°C, Per Diode TJ=45°C, t=10ms, 50Hz, Sine Recommended(M3) 400 400 10 20 14 100 83 -40 to +150 -40 to +150 1.1 V V A A A A W °C °C N·m R θJC Thermal Resistance Junction-to-Case 1.5 °C /W Weight 6g ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise specified Symbol Parameter Test Conditions Min. Typ. Max. Unit IRM Reverse Leakage Current VR=400V VR=400V, TJ=125°C -- -- 15 µA -- -- 250 µA VF Forward Voltage I F =10A IF=10A, TJ=125°C -- 1.00 --- 0.87 -- V V trr Reverse Recovery Time IF=1A, VR=30V, diF/dt=-200A/μs -- 20 -- ns trr Reverse Recovery Time VR=200V, IF=10A -- 25 -- ns IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=25°C -- 2.2 -- A trr Reverse Recovery Time VR=200V, IF=10A -- 46 -- ns IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=125°C -- 5.5 -- A Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. Page 1/3 http://www.thinkisemi.com/ IF (A) IRRM (A) L4204S ® 20 16 TJ =125°C 12 8 TJ =25°C 4 0 0 0.25 0.50 0.75 1.00 1.25 1.50 VF(V) Fig1. Forward Voltage Drop vs Forward Current 25 VR=200V TJ =125°C 20 IF=20A 15 10 5 IF=10A IF=5A 0 0 200 400 600 800 1000 diF/dt(A/μs) Fig3. Reverse Recovery Current vs diF/dt 1.2 1 0.8 0.6 trr 0.4 IRRM 0.2 Qrr 0 0 25 50 75 100 125 150 TJ (°C) Fig5. Dynamic Parameters vs Junction Temperature ZthJC (K/W) Qrr (nc) trr (ns) 70 VR=200V 60 TJ =125°C IF=20A 50 40 30 IF=10A 20 IF=5A 10 0 0 200 400 600 800 1000 diF/dt(A/μs) Fig2. Reverse Recovery Time vs diF/dt 250 VR=200V TJ =125°C 200 IF=20A 150 IF=10A IF=5A 100 50 0 0 200 400 600 800 1000 diF/dt(A/μs) Fig4. Reverse Recovery Charge vs diF/dt 10 1 10-1 10-2 Duty 0.5 0.2 0.1 0.05 Single Pulse 10-310-4 10-3 10-2 10-1 1 Rectangular Pulse Duration (seconds) Fig6. Transient Thermal Impedance Kf Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. Page 2/3 http://www.thinkisemi.com/ L4204S ® IF trr dIF/dt Qrr IRRM 0.9 IRRM 0.25 IRRM Fig7. Diode Reverse Recovery Test Circuit and Waveform Dimensions in Millimeters Fig8. Package Outline Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. Page 3/3 http://www.thinkisemi.com/ .


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