Monolithic Dual Switching Diode
Zowie Technology Corporation Monolithic Dual Switching Diode
3
MMBD2836GH
1 2
SOT-23
ORDERING INFORMATION
Device LM...
Description
Zowie Technology Corporation Monolithic Dual Switching Diode
3
MMBD2836GH
1 2
SOT-23
ORDERING INFORMATION
Device LMBD2835LT1G LMBD2835LT3G LMBD2836LT1G LMBD2836LT3G
Marking A3X A3X A2X A2X
Shipping 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel
MAXIMUM RATINGS
Rating Peak Reverse Voltage D.C Reverse Voltage
Peak Forward Current
LMBD2835LT1G LMBD2836LT1G
Symbol V RM VR
I FM
Average Rectified Current
IO
Value 75 35 75 450 300 150 100
THERMAL CHARACTERISTICS Characteristic
Total Device Dissipation FR– 5 Board (1) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
Symbol PD
R θ JA PD
R θ JA T J , T stg
Max 225
1.8 556 300
2.4 417 –55 to +150
ANODE 3
Unit Vdc Vdc mAdc mAdc
Unit mW mW/°C °C/W mW mW/°C °C/W °C
CATHODE 1
2 CATHODE
DEVICE MARKING LMBD2835LT1G = A3X;LMBD2836LT1G=A2X
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)( EACH DIODE )
Characteristic
Symbol
Min
Max
OFF CHARACTERISTICS
Reverse Breakdown Voltage(I R = 100 µAdc) LMBD2835LT1G V (BR)
35
—
LMBD2836LT1G
75 —
Reverse Voltage Leakage Current (V R = 30 Vdc)
LMBD2835LT1G
IR
—
100
(V R = 50 Vdc)
LMBD2836LT1G
Diode Capacitance
(V R = 0, f = 1.0 MHz)
Forward Voltage(I F = 10 mAdc)
(I F = 50 mAdc)
(I F = 100 mAdc)
Reverse Recovery Time(I F = I R = 10 mAdc, I =R(REC) 1.0mAdc) (Figure 1)
1...
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