MMBD2836GH

Zowie Technology Corporation Monolithic Dual Switching Diode 3 MMBD2836GH 1 2 SOT-23 ORDERING INFORMATION Device LMBD2835LT1G LMBD2835LT3G LMBD2836LT1G LMBD2836LT3G Marking A3X A3X A2X A2X Shipping 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel MAXIMUM RATINGS Rating Peak Reverse Voltage D.C Reverse Voltage Peak Forward Current LMBD2835LT1G LMBD2836LT1G Symbol V RM VR I FM Average Rectified Current IO Value 75 35 75 450 300 150 100 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board (1) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R θ JA PD R θ JA T J , T stg Max 225 1.8 556 300 2.4 417 –55 to +150 ANODE 3 Unit Vdc Vdc mAdc mAdc Unit mW mW/°C °C/W mW mW/°C °C/W °C CATHODE 1 2 CATHODE DEVICE MARKING LMBD2835LT1G = A3X;LMBD2836LT1G=A2X ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)( EACH DIODE ) Characteristic Symbol Min Max OFF CHARACTERISTICS Reverse Breakdown Voltage(I R = 100 µAdc) LMBD2835LT1G V (BR) 35 — LMBD2836LT1G 75 — Reverse Voltage Leakage Current (V R = 30 Vdc) LMBD2835LT1G IR — 100 (V R = 50 Vdc) LMBD2836LT1G Diode Capacitance (V R = 0, f = 1.0 MHz) Forward Voltage(I F = 10 mAdc) (I F = 50 mAdc) (I F = 100 mAdc) Reverse Recovery Time(I F = I R = 10 mAdc, I =R(REC) 1.0mAdc) (Figure 1) 1...