Document
MM60F020PC
®
MM60F020PC
Pb
Pb Free Plating Product
60.0 Ampere,200 Volt Common Cathode Fast Recovery Epitaxial Diode
APPLICATION
· Freewheeling, Snubber, Clamp · Inversion Welder · PFC · Plating Power Supply · Ultrasonic Cleaner and Welder · Converter & Chopper · UPS
TO-3PB/TO-3PN
Cathode(Bottom Side Metal Heatsink)
PRODUCT FEATURE
· Ultrafast Recovery Time · Soft Recovery Characteristics · Low Recovery Loss · Low Forward Voltage · High Surge Current Capability · Low Leakage Current
Internal Configuration Base Backside
—
Anode Cathode Anode
GENERAL DESCRIPTION
MM60F020PC using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristics.
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Values
Unit
VR Maximum D.C. Reverse Voltage
200 V
V RRM
Maximum Repetitive Reverse Voltage
200 V
I F(AV)
Average Forward Current
TC=100°C, Per Diode TC=100°C, Per Package
30 A 60 A
I F(RMS) I FSM
RMS Forward Current Non-Repetitive Surge Forward Current
TC=100°C, Per Diode TJ=45°C, t=10ms, 50Hz, Sine
53 300
A A
PD Power Dissipation
156 W
TJ Junction Temperature
-40 to +150
°C
T STG Torque
Storage Temperature Range Module-to-Sink
Recommended(M3)
-40 to +150 1.1
°C N·m
R θJC
Thermal Resistance
Weight
ELECTRICAL CHARACTERISTICS
Junction-to-Case
0.8 °C /W 6.0 g TC=25°C unless otherwise specified
Symbol
Parameter
IRM Reverse Leakage Current
Test Conditions VR=200V VR=200V, TJ=125°C
Min. Typ. Max. -- -- 25 -- -- 250
Unit µA µA
VF Forward Voltage
I F =30A IF=30A, TJ=125°C
-- 0.86 1.1 -- -- 0.95
V V
trr Reverse Recovery Time
IF=1A, VR=30V, diF/dt=-200A/μs -- 22 --
ns
trr Reverse Recovery Time
VR=100V, IF=30A
IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=25°C
-- 26 --- 2.3 --
ns A
trr Reverse Recovery Time
VR=100V, IF=30A
IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=125°C
-- 40 --- 4.1 --
ns A
Rev.05
Page 1/3
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
MM60F020PC
®
IF (A)
IRRM (A)
60
50
40
TJ =125°C
30
20
TJ =25°C
10
0 0 0.2 0.4 0.6 0.8 1.0 1.2
VF(V) Fig1. Forward Voltage Drop vs Forward Current
25
VR=100V TJ =125°C
20
15
IF=60A
10 IF=30A
IF=15A
5
0 0 200 400 600 800 1000
diF/dt(A/μs) Fig3. Reverse Recovery Current vs diF/dt
1.2
1
0.8
trr
0.6
IRRM
0.4
Qrr
0.2
0 0 25 50 75 100 125 150 TJ (°C)
Fig5. Dynamic Parameters vs Junction Temperature
ZthJC (K/W)
Qrr (nc)
trr (ns)
100 80 60 IF=60A
VR=100V TJ =125°C
40
IF=30A
20 IF=15A
0 0 200 400 600 800 1000 diF/dt(A/μs) Fig2. Reverse Recovery Time vs diF/dt
250
VR=100V TJ =125°C
200
150
100
50
IF=60A IF=30A IF=15A
0 0 200 400 600 800 1000 diF/dt(A/μs) Fig4. Reverse Recovery Charge vs diF/dt
10
1 10-1 10-2
Duty 0.5 0.2 0.1 0.05 Single Pulse
10-310-4
10-3
10-2
10-1
1
Rectangular Pulse Duration (seconds)
Fig6. Transient Thermal Impedance
Kf
Rev.05 © 2006 Thinki Semiconductor Co.,Ltd.
Page 2/3 http://www.thinkisemi.com/
MM60F020PC
®
IF trr
dIF/dt
Qrr IRRM
0.9 IRRM
0.25 IRRM
Fig7. Diode Reverse Recovery Test Circuit and Waveform
Dimensions in Millimeters Fig8. Package Outline
Rev.05 © 2006 Thinki Semiconductor Co.,Ltd.
Page 3/3 http://www.thinkisemi.com/
.