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MM60F020PC Dataheets PDF



Part Number MM60F020PC
Manufacturers Thinki Semiconductor
Logo Thinki Semiconductor
Description Common Cathode Fast Recovery Epitaxial Diode
Datasheet MM60F020PC DatasheetMM60F020PC Datasheet (PDF)

MM60F020PC ® MM60F020PC Pb Pb Free Plating Product 60.0 Ampere,200 Volt Common Cathode Fast Recovery Epitaxial Diode APPLICATION · Freewheeling, Snubber, Clamp · Inversion Welder · PFC · Plating Power Supply · Ultrasonic Cleaner and Welder · Converter & Chopper · UPS TO-3PB/TO-3PN Cathode(Bottom Side Metal Heatsink) PRODUCT FEATURE · Ultrafast Recovery Time · Soft Recovery Characteristics · Low Recovery Loss · Low Forward Voltage · High Surge Current Capability · Low Leakage Current Int.

  MM60F020PC   MM60F020PC



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MM60F020PC ® MM60F020PC Pb Pb Free Plating Product 60.0 Ampere,200 Volt Common Cathode Fast Recovery Epitaxial Diode APPLICATION · Freewheeling, Snubber, Clamp · Inversion Welder · PFC · Plating Power Supply · Ultrasonic Cleaner and Welder · Converter & Chopper · UPS TO-3PB/TO-3PN Cathode(Bottom Side Metal Heatsink) PRODUCT FEATURE · Ultrafast Recovery Time · Soft Recovery Characteristics · Low Recovery Loss · Low Forward Voltage · High Surge Current Capability · Low Leakage Current Internal Configuration Base Backside — Anode Cathode Anode GENERAL DESCRIPTION MM60F020PC using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristics. ABSOLUTE MAXIMUM RATINGS TC=25°C unless otherwise specified Symbol Parameter Test Conditions Values Unit VR Maximum D.C. Reverse Voltage 200 V V RRM Maximum Repetitive Reverse Voltage 200 V I F(AV) Average Forward Current TC=100°C, Per Diode TC=100°C, Per Package 30 A 60 A I F(RMS) I FSM RMS Forward Current Non-Repetitive Surge Forward Current TC=100°C, Per Diode TJ=45°C, t=10ms, 50Hz, Sine 53 300 A A PD Power Dissipation 156 W TJ Junction Temperature -40 to +150 °C T STG Torque Storage Temperature Range Module-to-Sink Recommended(M3) -40 to +150 1.1 °C N·m R θJC Thermal Resistance Weight ELECTRICAL CHARACTERISTICS Junction-to-Case 0.8 °C /W 6.0 g TC=25°C unless otherwise specified Symbol Parameter IRM Reverse Leakage Current Test Conditions VR=200V VR=200V, TJ=125°C Min. Typ. Max. -- -- 25 -- -- 250 Unit µA µA VF Forward Voltage I F =30A IF=30A, TJ=125°C -- 0.86 1.1 -- -- 0.95 V V trr Reverse Recovery Time IF=1A, VR=30V, diF/dt=-200A/μs -- 22 -- ns trr Reverse Recovery Time VR=100V, IF=30A IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=25°C -- 26 --- 2.3 -- ns A trr Reverse Recovery Time VR=100V, IF=30A IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=125°C -- 40 --- 4.1 -- ns A Rev.05 Page 1/3 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ MM60F020PC ® IF (A) IRRM (A) 60 50 40 TJ =125°C 30 20 TJ =25°C 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 VF(V) Fig1. Forward Voltage Drop vs Forward Current 25 VR=100V TJ =125°C 20 15 IF=60A 10 IF=30A IF=15A 5 0 0 200 400 600 800 1000 diF/dt(A/μs) Fig3. Reverse Recovery Current vs diF/dt 1.2 1 0.8 trr 0.6 IRRM 0.4 Qrr 0.2 0 0 25 50 75 100 125 150 TJ (°C) Fig5. Dynamic Parameters vs Junction Temperature ZthJC (K/W) Qrr (nc) trr (ns) 100 80 60 IF=60A VR=100V TJ =125°C 40 IF=30A 20 IF=15A 0 0 200 400 600 800 1000 diF/dt(A/μs) Fig2. Reverse Recovery Time vs diF/dt 250 VR=100V TJ =125°C 200 150 100 50 IF=60A IF=30A IF=15A 0 0 200 400 600 800 1000 diF/dt(A/μs) Fig4. Reverse Recovery Charge vs diF/dt 10 1 10-1 10-2 Duty 0.5 0.2 0.1 0.05 Single Pulse 10-310-4 10-3 10-2 10-1 1 Rectangular Pulse Duration (seconds) Fig6. Transient Thermal Impedance Kf Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. Page 2/3 http://www.thinkisemi.com/ MM60F020PC ® IF trr dIF/dt Qrr IRRM 0.9 IRRM 0.25 IRRM Fig7. Diode Reverse Recovery Test Circuit and Waveform Dimensions in Millimeters Fig8. Package Outline Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. Page 3/3 http://www.thinkisemi.com/ .


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