MMBT3904W

General Purpose Transistor NPN Silicon Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC MMBT3904W COLLECTOR 3 1 BASE 2 EMITTER 3 1 2 SOT-323(SC-70) Value 40 60 6.0 200 Unit Vdc Vdc Vdc mAdc Thermal Characteristics Characteristics Total Device Dissipation TA=25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature Symbol PD R qJA TJ,Tstg Max 150 833 -55 to +150 Unit mW C/W C Device Marking MMBT3904W=AM Electrical Characteristics (TA=25 C Unless Otherwise noted) Characteristics Symbol Min Max Unit Off C har acter istics Collector-Emitter Breakdown Voltage(2) (IC=1.0mAdc.IB=0) V(BR)CEO 40 - Vdc Collector-Base Breakdown Voltage (IC=10 µAdc, IE=0) V(BR)CBO 60 - Vdc Emitter-Base Breakdown Voltage (IE=10 µAdc, IC=0) V(BR)EBO Base Cutoff Current (VCE=30 Vdc, VEB =3.0 Vdc) IBL Collector Cutoff Current (VCE=30Vdc, VEB=3.0Vdc) ICEX 1. Device Mounted FR4 glass epoxy printed circuit board using the minimun recommended footprint. 2. Pulse Test:Pulse Width <=300uS, Duty Cycle <= 2.0% 6.0 - - 50 50 Vdc nAdc nAdc WEITRON http://www.weitron.com.tw MMBT3904W Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min On Characteristics (2) DC Current Gain (IC= 0.1 mAdc, VCE=1.0Vdc) (IC= 1.0 mAdc, VCE= 1.0 Vdc) (IC= 10 mAdc, VCE= 1.0Vdc) (IC= 50 mAdc, VCE= 1.0Vdc) (IC= 100 mAdc, VCE= 1.0Vdc) Colle...