Document
DATA SHEET
MMBT3906W
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE 40 Volts POWER 150 mWatts SOT-323
FEATURES
• PNP epitaxial silicon, planar design
• Collector-emitter voltage VCE = -40V
• Collector current IC = -200mA • Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above
.087(2.2) .070(1.8)
.054(1.35) .045(1.15)
.004(.10)MIN. .087(2.2) .078(2.0)
Unit: inch (mm)
MECHANICAL DATA
Case: SOT-323, Plastic
Terminals: Solderable per MIL-STD-202, Method 208
Approx. Weight: 0.0052 gram
Marking: S2A
Top View
3 Collector
1 BASE
3 COLLECTOR
.056(1.40) .047(1.20)
.004(.10)MAX.
.006(.15) .002(.05)
.016(.40) .078(.20)
.044(1.1) .035(0.9)
1 Base
2 Emitter
ABSOLUTE RATINGS
PARAM ETER C ollector-Em itterVoltage
C ollector-Base Voltage
Em itter-Base Voltage
C ollectorC urrent-C ontinuous
2 EMITTER
Sym bol VCEO VCBO VEBO IC
Value -40 -40 -5.0 -200
U nits V V V mA
THERMAL CHARACTERISTICS
PARAMETER Max Power Dissipation (Note 1) Thermal Resistance , Junction to Ambient Junction Temperature Storage Temperature
Symbol PTOT RθJA TJ TISTG
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
STAD-JUL.06.2004
Value 150 833 -55 to 150 -55 to 150
Units mW O C/W OC OC
PAGE . 1
ELECTRICAL CHARACTERISTICS
PA R A M E TE R C ollector - E m itter B reakdow n V oltage
S ym bol
Test C ondition
V (B R )C E O IC =-1.0m A , IB =0
M IN . -4 0
TYP. -
C ollector - B ase B reakdow n V oltage
V (B R )C B O IC =-10uA , IE =0
-40 -
E m itter - B ase B reakdow n V oltage
V (B R )E B O IE =-10uA , IC =0
-5.0 -
B ase C utoff C urrent
IB L V C E =-30V , V E B =-3.0V
--
C ollector C utoff C urrent
D C C urrent G ain (N ote 2)
C ollector - E m itter S aturation V oltage (N ote 2) B ase - E m itter S aturation V oltage (N ote 2) C ollector - B ase C apacitance
IC E X V C E =-30V , V E B =-3.0V
IC =-0.1m A , V C E =-1.0V IC =-1.0m A , V C E =-1.0V h IC =-10m A , V C E =-1.0V
FE
IC =-50m A , V C E =-1.0V IC =-100m A , V C E =-1.0V
V C E (S A T) V B E (S A T)
IC =-10m A , IB =-1.0m A IC =-50m A , IB =-5.0m A
IC =-10m A , IB =-1.0m A IC =-50m A , IB =-5.0m A
C CBO
V C B =-5V , IE =0, f=1M H z
-
60 80 100 60 30
-
-0 .6 5 -
-
-
-
-
-
-
E m itter - B ase C apacitance
C EBO
V C B =-0.5V , IC =0, f=1M H z
--
D elay Tim e R ise Tim e S torage Tim e F all Tim e
td V C C =-3V ,V B E =-0.5V , IC =-10m A ,IB =-1.0m A
tr V C C =-3V ,V B E =-0.5V , IC =-10m A ,IB =-1.0m A V C C =-3V ,IC =-10m A
ts IB 1=IB 2=-1.0m A
tf V C C =-3V ,IC =-10m A IB 1=IB 2=-1.0m A
-----
Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
3V
M AX.
-
-
-
-5 0
-5 0
300 -0 .2 5 -0 .4 -0 .8 5 -0 .9 5 4 .5
10
35
35
225
75
U nits V V V nA nA
-
V V pF pF ns ns ns ns
0.5V 0
< 1ns
10KΩ
275Ω CS* < 4pF
300ns
-10.9V
1N916
Duty C ycle ~ 2.0%
Delay and Rise Tim e Equivalent Test Circuit
3V
STAD-JUL.06.2004
< 1ns +9.1V
10K Ω
0
275 Ω CCSS** << 44ppFF
10 to 500u.