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MMBT3906W Dataheets PDF



Part Number MMBT3906W
Manufacturers Pan Jit International
Logo Pan Jit International
Description PNP GENERAL PURPOSE SWITCHING TRANSISTOR
Datasheet MMBT3906W DatasheetMMBT3906W Datasheet (PDF)

DATA SHEET MMBT3906W PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 150 mWatts SOT-323 FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -40V • Collector current IC = -200mA • Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above .087(2.2) .070(1.8) .054(1.35) .045(1.15) .004(.10)MIN. .087(2.2) .078(2.0) Unit: inch (mm) MECHANICAL DATA Case: SOT-323, Plastic Terminals: Solderable per MIL-STD.

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DATA SHEET MMBT3906W PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 150 mWatts SOT-323 FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -40V • Collector current IC = -200mA • Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above .087(2.2) .070(1.8) .054(1.35) .045(1.15) .004(.10)MIN. .087(2.2) .078(2.0) Unit: inch (mm) MECHANICAL DATA Case: SOT-323, Plastic Terminals: Solderable per MIL-STD-202, Method 208 Approx. Weight: 0.0052 gram Marking: S2A Top View 3 Collector 1 BASE 3 COLLECTOR .056(1.40) .047(1.20) .004(.10)MAX. .006(.15) .002(.05) .016(.40) .078(.20) .044(1.1) .035(0.9) 1 Base 2 Emitter ABSOLUTE RATINGS PARAM ETER C ollector-Em itterVoltage C ollector-Base Voltage Em itter-Base Voltage C ollectorC urrent-C ontinuous 2 EMITTER Sym bol VCEO VCBO VEBO IC Value -40 -40 -5.0 -200 U nits V V V mA THERMAL CHARACTERISTICS PARAMETER Max Power Dissipation (Note 1) Thermal Resistance , Junction to Ambient Junction Temperature Storage Temperature Symbol PTOT RθJA TJ TISTG Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. STAD-JUL.06.2004 Value 150 833 -55 to 150 -55 to 150 Units mW O C/W OC OC PAGE . 1 ELECTRICAL CHARACTERISTICS PA R A M E TE R C ollector - E m itter B reakdow n V oltage S ym bol Test C ondition V (B R )C E O IC =-1.0m A , IB =0 M IN . -4 0 TYP. - C ollector - B ase B reakdow n V oltage V (B R )C B O IC =-10uA , IE =0 -40 - E m itter - B ase B reakdow n V oltage V (B R )E B O IE =-10uA , IC =0 -5.0 - B ase C utoff C urrent IB L V C E =-30V , V E B =-3.0V -- C ollector C utoff C urrent D C C urrent G ain (N ote 2) C ollector - E m itter S aturation V oltage (N ote 2) B ase - E m itter S aturation V oltage (N ote 2) C ollector - B ase C apacitance IC E X V C E =-30V , V E B =-3.0V IC =-0.1m A , V C E =-1.0V IC =-1.0m A , V C E =-1.0V h IC =-10m A , V C E =-1.0V FE IC =-50m A , V C E =-1.0V IC =-100m A , V C E =-1.0V V C E (S A T) V B E (S A T) IC =-10m A , IB =-1.0m A IC =-50m A , IB =-5.0m A IC =-10m A , IB =-1.0m A IC =-50m A , IB =-5.0m A C CBO V C B =-5V , IE =0, f=1M H z - 60 80 100 60 30 - -0 .6 5 - - - - - - - E m itter - B ase C apacitance C EBO V C B =-0.5V , IC =0, f=1M H z -- D elay Tim e R ise Tim e S torage Tim e F all Tim e td V C C =-3V ,V B E =-0.5V , IC =-10m A ,IB =-1.0m A tr V C C =-3V ,V B E =-0.5V , IC =-10m A ,IB =-1.0m A V C C =-3V ,IC =-10m A ts IB 1=IB 2=-1.0m A tf V C C =-3V ,IC =-10m A IB 1=IB 2=-1.0m A ----- Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS 3V M AX. - - - -5 0 -5 0 300 -0 .2 5 -0 .4 -0 .8 5 -0 .9 5 4 .5 10 35 35 225 75 U nits V V V nA nA - V V pF pF ns ns ns ns 0.5V 0 < 1ns 10KΩ 275Ω CS* < 4pF 300ns -10.9V 1N916 Duty C ycle ~ 2.0% Delay and Rise Tim e Equivalent Test Circuit 3V STAD-JUL.06.2004 < 1ns +9.1V 10K Ω 0 275 Ω CCSS** << 44ppFF 10 to 500u.


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