Purpose Amplifier. MMBT5550 Datasheet

MMBT5550 Amplifier. Datasheet pdf. Equivalent

MMBT5550 Datasheet
Recommendation MMBT5550 Datasheet
Part MMBT5550
Description NPN General Purpose Amplifier
Feature MMBT5550; MMBT5550 NPN General Purpose Amplifier MMBT5550 NPN General Purpose Amplifier • This device is desi.
Manufacture Fairchild Semiconductor
Datasheet
Download MMBT5550 Datasheet




Fairchild Semiconductor MMBT5550
MMBT5550
NPN General Purpose Amplifier
• This device is designed for general purpose high voltage amplifiers
and gas discharge display drivers.
August 2005
3
2
1
SOT-23
Marking: 1F
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
VCBO
VEBO
IC
TJ, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
- Continuous
Junction and Storage Temperature
140
160
6.0
600
-55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IEBO
Emitter Cutoff Current
On Characteristics
hFE DC Current Gain
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Test Condition
IC = 1.0mA, IB = 0
IC = 100µA, IE = 0
IE = 10mA, IC = 0
VCB = 100V, IE = 0
VCB = 100V, IE = 0, Ta = 100°C
VEB = 4.0V, IC = 0
IC = 1.0mA, VCE = 5.0V
IC = 10mA, VCE = 5.0V
IC = 50mA, VCE = 5.0V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Min.
140
160
6.0
60
60
20
Units
V
V
V
mA
°C
Max.
100
100
50
Units
V
V
V
nA
µA
nA
250
0.15 V
0.25 V
1.0 V
1.2 V
©2005 Fairchild Semiconductor Corporation
MMBT5550 Rev. A
1
www.fairchildsemi.com



Fairchild Semiconductor MMBT5550
Electrical Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
Small Signal Characteristics
fT
Current Gain Bandwidth Product
IC = 10mA, VCE = 10V,
f = 100MHz
Cobo
Cibo
Output Capacitance
Input Capacitance
VCB = 10V, IE = 0, f = 1.0MHz
VBE = 0.5V, IC = 0, f = 1.0MHz
Min.
50
Max.
6.0
30
Units
MHz
pF
pF
Thermal Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 1.6" × 1.6" × 0.06."
Max.
350
2.8
357
Units
mW
mW/°C
°C/W
Package Marking and Ordering Information
Device Marking
1F
Device
MMBT5550
Package
SOT-23
Reel Size
7”
Tape Width
--
Quantity
3,000
MMBT5550 Rev. A
2 www.fairchildsemi.com



Fairchild Semiconductor MMBT5550
Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gain
vs Collector Current
250
200 125 oC
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
0.5
0.4 β = 10
150
100
50 VCE = 5V
25 oC
-40 oC
0
0.1 0.2
0.5 1 2
5 10 20
50
IC - COLLECTOR CURRENT (mA)
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
100
1.0
β = 10
- 40 oC
0.8
25 oC
0.6
125 oC
0.4
0.2
0.0
1
10 100
IC - COLLECTOR CURRENT (mA)
Figure 5. Collector Cutoff Current
vs Ambient Temperature
200
0.3
25 oC
0.2
125 oC
0.1
- 40 oC
0.0
1
10 100
IC - COLLECTOR CURRENT (mA)
Figure 4. Base-Emitter On Voltage
vs Collector Current
1.0
- 40 oC
0.8
0.6 25 oC
0.4 125 oC
0.2
VCE = 5V
0.0
0.1 1 10 100
IC - COLLECTOR CURRENT (mA)
Figure 6. Input and Output Capacitance
vs Reverse Voltaget
50
VCB = 100V
10
1
25 50 75 100 125
TA - AMBIE NT TEMP ERATURE (°C)
30
25
20
15
10
5
0
0.1
f = 1.0 MHz
C ib
C cb
1 10
VCE - COLLECTOR VOLTAGE (V)
100
MMBT5550 Rev. A
3 www.fairchildsemi.com







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