RB521S-30

RB521S-30 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for low current rectification and high speed switching applications Features Extremely small surface mounting type PINNING PIN 1 2 1 DESCRIPTION Cathode Anode 2 C Top View Marking Code: "C" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60Hz for Cyc.) Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 200 mA Reverse Current at VR = 10 V Symbol VR IO IFSM Tj Ts Value 30 200 1 125 - 40 to + 125 Unit V mA A OC OC Symbol VF IR Max. 0.5 30 Unit V µA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 23/11/2006 RB521S-30 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 23/11/2006 A C RB521S-30 PACKAGE OUTLINE Plastic surface mounted package; 2 leads ∠ ALL ROUND HE D A SOD-523 E bp UNIT A b p C D E HE V mm 0.70 0.60 0.4 0.135 1.25 0.85 0.3 0.127 1.15 0.75 1.7 1.5 0.1 ∠ 5O SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 23/11/2006 ...