RB521S-40

Schottky barrier diode RB521S-40 Applications Rectifying small power Dimensions (Unit : mm) 0.8±0.05 0.12±0.05 Data Sheet  Land size figure (Unit : mm) 0.8 0.6 1.7 Features 1) Ultra small mold type. (EMD2) 2) Low VF 3) High reliability Construction Silicon epitaxial planar 1.2±0.05 1.6±0.1 0.3±0.05 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) 0.6±0.1 Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.5±0.05 φ1.55±0.05 EMD2 Structure 0.2±0.05 1.75±0.1 0.6 3.5±0.05 8.0±0.15 11..22560±.0.0065 00 2.2.4405±±0.0.015 11..235±0..0066 0 00.9.905±±0.005.06 0 Emポptケy pッoトcket 4.0±0.1 2.0±0.05 φ0.5 0.2 00.7.756±±0.005.05 Absolute maximum ratings （Ta=25℃） Parameter Symbol Reverse voltage (repetitive peak) VRM Reverse voltage (DC) Average retified forward current VR Io Forward currnt surge peak(60Hz/1cyc) Junction temperature IFSM Tj Storage temperature Tstg Limits 45 40 200 4 150 -55 to +150 Electrical characteristic (Ta=25C) Parameter Symbol Forward voltage VF Reverse current ESD break down voltage IR ESD Min. Typ. Max. 0.16 0.26 0.30 0.31 0.395 0.45 0.41 0.495 0.54 - 3.5 20 - 13 90 10 - - Unit V V mA A ℃ ℃ Unit V μA kV Conditions IF=10mA IF=100mA IF=200mA VR=10V VR=40V C=100pF, R=1.5k forward and reverse : 1time www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.03 - Rev.B RB521S-40 　 Electrical characteristic curves FORWARD CURRENT : IF(mA) 1000 Ta=75℃ 100 Ta=125℃ Ta=150℃ 10 Ta=-25...