JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BC337,-16,-25,-40 TRANSISTOR (...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate
Transistors
BC337,-16,-25,-40
TRANSISTOR (
NPN)
BC338, -16,-25,-40
TO-92
FEATURES Power dissipation
1. COLLECTOR
PCM: 0.625 W (Tamb=25℃)
2. BASE
Collector current
ICM: 0.8 A
Collector-base voltage
VCBO:
BC337 50 V BC338 30 V
Operating and storage junction temperature range
3. EMITTER
123
TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP MAX
Collector-base breakdown voltage BC337 BC338
Collector-emitter breakdown voltage BC337 BC338
VCBO VCEO
Ic= 100µA, IE=0 IC= 10 mA , IB=0
50 30
45 25
Emitter-base breakdown voltage
Collector cut-off current Collector cut-off current
BC337 BC338
BC337 BC338
Emitter cut-off current
VEBO ICBO
ICEO IEBO
IE= 10µA, IC=0
VCB= 45 V, IE=0 VCB= 25V, IE=0
VCE= 40 V, IB=0 VCE= 20 V, IB=0 VEB= 4 V, IC=0
5
0.1 0.1
0.2 0.2 0.1
UNIT
V V
V V V
µA µA
µA µA µA
DC current gain BC337/BC338 BC337-16/BC338-16 BC337-25/BC338-25 BC337-40/BC338-40
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
hFE(1)
HFE(2) VCE(sat) VBE(sat)
fT
VCE=1V, IC= 100mA
VCE=1V, IC= 300mA IC=500 mA, IB= 50 mA IC= 500 mA, IB=50 mA
VCE= 5V, IC= 10mA
f = 100MHz
100 100 160 250 60
210
630 250 400 630
0.7 V 1.2 V
MHz
...
