DatasheetsPDF.com

CQ89MS Dataheets PDF



Part Number CQ89MS
Manufacturers Central Semiconductor Corp
Logo Central Semiconductor Corp
Description 2.0 AMP TRIAC 400 THRU 800 VOLTS
Datasheet CQ89MS DatasheetCQ89MS Datasheet (PDF)

NE W CQ89DS CQ89MS CQ89NS 2.0 AMP TRIAC 400 THRU 800 VOLTS Central DESCRIPTION: TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CQ89DS series types are epoxy molded silicon triacs designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. SOT-89 SOT-89 CASE MAXIMUM RATINGS (TC=25oC) SYMBOL Peak Repetitive Off-State Voltage VDRM RMS On-State Current (TC=80oC) IT(RMS) Peak One Cycle Surge (10ms) ITSM Peak Gate Current IGM Average Gate Power Dissipat.

  CQ89MS   CQ89MS



Document
NE W CQ89DS CQ89MS CQ89NS 2.0 AMP TRIAC 400 THRU 800 VOLTS Central DESCRIPTION: TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CQ89DS series types are epoxy molded silicon triacs designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. SOT-89 SOT-89 CASE MAXIMUM RATINGS (TC=25oC) SYMBOL Peak Repetitive Off-State Voltage VDRM RMS On-State Current (TC=80oC) IT(RMS) Peak One Cycle Surge (10ms) ITSM Peak Gate Current IGM Average Gate Power Dissipation PG(AV) StorageTemperature Tstg Junction Temperature TJ Thermal Resistance ΘJ-C CQ89DS 400 CQ89MS CQ89NS 600 800 2.0 10 1.0 0.1 -45 to +150 -45 to +125 10 UNITS V A A A W oC oC oC/W ELECTRICAL CHARACTERISTICS (TC=25oC unless otherwise noted) SYMBOL IDRM IDRM IGT IH VGT VTM dv/dt TEST CONDITIONS VD=Rated VDRM VD=Rated VDRM, TC=125oC VD=12V, QUAD I, II, III, IV VD=12V VD=12V IT=3.0A VD= 2 VDRM, TC=125oC 3 MIN TYP MAX 5.0 200 5.0 5.0 2.0 1.75 UNITS µA µA mA mA V V V/µs 30 254 All dimensions in inches (mm). LEAD CODE: 1) GATE 2) MT2 3) MT1 R2 R1 255 .


CQ89M CQ89MS CQ89N


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)