XBS013S15R-G Diode Datasheet

XBS013S15R-G Datasheet, PDF, Equivalent


Part Number

XBS013S15R-G

Description

Schottky Barrier Diode

Manufacture

Torex Semiconductor

Total Page 3 Pages
Datasheet
Download XBS013S15R-G Datasheet


XBS013S15R-G
XBS013S15R-G
Schottky Barrier Diode, 100mA, 30V Type
ETR1603-003
FEATURES
Forward Voltage
: VF=0.71V (TYP.)
Forward Current
: IF(AV)=100mA
Repetitive Peak Reverse Voltage: VRM=30V
Environmentally Friendly
: EU RoHS Compliant, Pb Free
APPLICATIONS
Low Current Rectification
ABSOLUTE MAXIMUM RATING
Ta=25
PARAMETER
SYMBOL RATINGS UNIT
Repetitive Peak Reverse Voltage
VRM
30 V
Reverse Voltage (DC)
VR 30 V
Forward Current (Average)
IF(AV)
100 mA
Non Continuous
Forward Surge Current*1
IFSM
0.6
Junction Temperature
Tj 125
Storage Temperature Range
Tstg -55+150
*1Non continuous high amplitude 60Hz half –sine wave.
A
MARKING RULE
PACKAGING INFORMATION
Cathode Bar
: 0 (Product Number)
: Assembly Lot Number
PRODUCT NAME
PRODUCT NAME
DESCRIPTION
XBS013S15R
SOD-523
XBS013S15R-G
SOD-523 (Halogen & Antimony free)
* The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.
* The device orientation is fixed in its embossed tape pocket.
SOD-523
Unit : mm
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
Forward Voltage
Reverse Current
Inter-Terminal Capacity
Reverse Recovery Time*2
*2trr measurement circuit
Bias
VF1 IF=1mA
VF2 IF=100mA
IR VR=25V
Ct VR=0V , f=1MHz
trr IF=IR=10mA , irr=1mA
Device Under test
Pulse Generatrix
Oscilloscope
A
IF
0
irr
IR
trr
MIN.
-
-
-
-
-
LIMITS
TYP.
0.31
0.71
-
6
2
Ta=25
MAX.
-
1
2
-
-
UNIT
V
V
μA
pF
ns
t
1/3

XBS013S15R-G
XBS013S15R-G
TYPICAL PERFORMANCE CHARACTERISTICS
(1) Forward Current vs. Forward Voltage
(2) Reverse Current vs. Reverse Voltage
100 1000
Ta=125℃
10
75℃
1
-25℃
25℃
0.1
0
0.2 0.4 0.6
Forward Voltage: VF (V)
0.8
(3) Forward Voltage vs. Operating Temperature
0.8
IF=100mA
0.6
0.4
10mA
0.2 1mA
100 Ta=125℃
10
75℃
1
0.1 25℃
0.01
0 10 20
Reverse Voltage: VR (V)
(4) Reverse Current vs. Operating Temperature
1000
30
100
10
VR=25V
15V
5V
1
0.1
0.0
-50 0 50 100
Operating Temperature: Ta (℃)
(5) Inter-Terminal Capacity vs. Reverse Voltage
150
50
0.01
0
50 100
OOppeerraattiningg TTeemmpperaattuurree: TTaa((℃))
150
(6) Average Forward Current vs. Operating Temperature
250
40 200
30 150
20 100
10
0
0
Ta=25℃
10 20
ReRveevresreseVoVlotaltgaeg:eV RV(RV(V) )
30
50
0
0 50 100
OOppeeraratitninggTTeemmppeerraattuurere:  TaTa((℃) )
150
2/3


Features XBS013S15R-G Schottky Barrier Diode, 100 mA, 30V Type ETR1603-003 ■FEATURES Forward Voltage : VF=0.71V (TYP.) Fo rward Current : IF(AV)=100mA Repetiti ve Peak Reverse Voltage: VRM=30V Envir onmentally Friendly : EU RoHS Complian t, Pb Free ■APPLICATIONS ●Low Curr ent Rectification ■ABSOLUTE MAXIMUM RATING Ta=25℃ PARAMETER SYMBOL RATI NGS UNIT Repetitive Peak Reverse Volta ge VRM 30 V Reverse Voltage (DC) VR 30 V Forward Current (Average) IF(AV ) 100 mA Non Continuous Forward Surge Current*1 IFSM 0.6 Junction Tempera ture Tj 125 Storage Temperature Range Tstg -55~+150 *1:Non continuous high amplitude 60Hz half –sine wave. A ℃ ℃ ■MARKING RULE ■PACKAGI NG INFORMATION Cathode Bar ①: 0 (Pro duct Number) ②: Assembly Lot Number ■PRODUCT NAME PRODUCT NAME DESCRIPT ION XBS013S15R SOD-523 XBS013S15R-G SOD-523 (Halogen & Antimony free) * T he “-G” suffix indicates that the p roducts are Halogen and Antimony free as well as being fully RoHS compliant. * The device orienta.
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