XBS013S1CR-G Diode Datasheet

XBS013S1CR-G Datasheet, PDF, Equivalent


Part Number

XBS013S1CR-G

Description

Schottky Barrier Diode

Manufacture

Torex Semiconductor

Total Page 3 Pages
Datasheet
Download XBS013S1CR-G Datasheet


XBS013S1CR-G
XBS013S1CR-G
Schottky Barrier Diode, 100mA, 30V Type
FEATURES
Ultra Small Package
APPLICATIONS
Low Current Rectification
ETR1619-004
ABSOLUTE MAXIMUM RATINGS
PARMETER
SYMBOL
RATINGS
Ta=25
UNITS
Repetitive Peak Voltage
VRM
30
Reverse Voltage (DC)
VR 30
Forward Current (Average)
Peak Forward Surge Current *1
IF(AV)
IFSM
100
0.6
Junction Temperature
Tj 125
Storage Temperature Range
Tstg -55 +125
*1) 60Hz Half sine wave, 1 cycle, Non-Repetitive.
V
V
mA
A
PACKAGING INFORMATION
MARKING RULE
3(Product Number)
a,b,c,d,e,d,e,f,g,h Lot Number
PRODUCT NAME
PRODUCT NAME
XBS013S1CR-G*
PACKAGE
USP-2B02
* The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.
* The device orientation is fixed in its embossed tape pocket.
ELECTRICAL CHARACTERISTICS
PARAMETER
Forward Voltage
Reverse Current
SYMBOL
VF1
IR
TEST CONDITIONS
IF=100mA
VR=25V
MIN.
-
-
LIMITS
TYP.
0.71
-
Ta=25
MAX.
1
2
UNITS
V
A
●NOTES ON USE
1. Please keep away from mechanical stress to the product when mounting or after mounting.
2. If the IC is mounted close to a board break line or fixed in screws, the IC or its electrodes may be caused damage as results of board
deformation and mechanical stress.
1/3

XBS013S1CR-G
XBS013S1CR-G
TYPICAL PERFORMANCE CHARACTERISTICS
(1) Forward Current vs. Forward Voltage
(2) Reverse Current vs. Reverse Voltage
100 1000
Ta=125℃
10
75℃
1
-25℃
25℃
100
Ta=125℃
10
75℃
1
25℃
0.1
0.1
0
0.2 0.4 0.6
Forward Voltage VF (V)
(3) Forward Voltage vs. Operating Temperature
0.8
0.8
0.01
0
10 20
Reverse Voltage VR (V)
(4) Reverse Current vs. Operating Temperature
1000
30
100
0.6
IF=50mA
10
0.4
10mA
1
0.2 1mA
0.1
VR=25V
15V
5V
0.0
-50
0 50 100
Operating Temperature Ta (℃)
(5) Inter-Terminal Capacity vs. Reverse Voltage
150
50
0.01
0
50 100
Operating Temperature Ta (℃)
150
(6) Average Forward Current vs. Operating Temperature
200
40
30
20
10
0
0
Ta=25℃
10 20
Reverse Voltage VR (V)
30
150
100
50
0
0 50 100 150
Operating Temperature Ta (℃)
2/3


Features XBS013S1CR-G Schottky Barrier Diode, 10 0mA, 30V Type FEATURES Ultra Small Pac kage APPLICATIONS Low Current Rectific ation ETR1619-004 ABSOLUTE MAXIMUM RA TINGS PARMETER SYMBOL RATINGS Ta=25 UNITS Repetitive Peak Voltage VRM 3 0 Reverse Voltage (DC) VR 30 Forward Current (Average) Peak Forward Surge C urrent *1 IF(AV) IFSM 100 0.6 Juncti on Temperature Tj 125 Storage Tempera ture Range Tstg -55 +125 *1) 60Hz Hal f sine wave, 1 cycle, Non-Repetitive. V V mA A PACKAGING INFORMATION MARKIN G RULE 3(Product Number) a,b,c,d,e,d,e, f,g,h Lot Number PRODUCT NAME PRODUCT NAME XBS013S1CR-G* PACKAGE USP-2B02 * The “-G” suffix indicates that th e products are Halogen and Antimony fre e as well as being fully RoHS compliant . * The device orientation is fixed in its embossed tape pocket. ELECTRICAL C HARACTERISTICS PARAMETER Forward Volta ge Reverse Current SYMBOL VF1 IR TEST CONDITIONS IF=100mA VR=25V MIN. - LI MITS TYP. 0.71 - Ta=25 MAX. 1 2 UNITS V A ●NOTES ON USE 1. Plea.
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