Barrier Diode. XBS206S17R-G Datasheet

XBS206S17R-G Datasheet PDF, Equivalent


Part Number

XBS206S17R-G

Description

Schottky Barrier Diode

Manufacture

Torex Semiconductor

Total Page 3 Pages
PDF Download
Download XBS206S17R-G Datasheet PDF


XBS206S17R-G Datasheet
XBS206S17R-G
Schottky Barrier Diode, 2A, 60V Type
ETR1613-002a
FEATURES
Forward Voltage
Forward Current
Repetitive Peak Reverse Voltage
: VF=0.615V (TYP.)
: IF(AVE)=2A
: VRM=60V
ABSOLUTE MAXIMUM RATINGS
Ta=25
PARAMETER
SYMBOL RATINGS UNIT
Repetitive Peak Reverse Voltage VRM
60 V
Reverse Voltage (DC)
VR 60 V
Forward Current (Average)
IF(AVE) 2 A
Non Continuous
Forward Surge Current*1
IFSM
45
Junction Temperature
Tj 125
Storage Temperature Range
Tstg -55+150
*1Non continuous high amplitude 60Hz half-sine wave.
A
APPLICATIONS
Rectification
Protection against reverse connection of battery
PACKAGING INFORMATION
MARKING RULE
Cathode Bar
①②③④⑤⑥: 206S17(Product Number)
⑦⑧
: Assembly Lot Number
PRODUCT NAME
PRODUCT NAME
DEVICE ORIENTATION
XBS206S17R-G
SMA (Halogen & Antimony free)
XBS206S17R
SMA
* The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.
* The device orientation is fixed in its embossed tape pocket.
ELECTRICAL CHARACTERISTICS
PARAMETER
Forward Voltage
Reverse Current
Inter-Terminal Capacity
Reverse Recovery Time*2
*2trr measurement circuit
Bias
Pulse Generatrix
SYMBOL
TEST CONDITIONS
VF1 IF=200μA
VF2 IF=2A
IR1 VR=30V
IR2 VR=60V
Ct VR=1V , f=1MHz
trr IF=IR=10mA , irr=1mA
Device Under test
Oscilloscope
SMA
Unit: mm
MIN.
-
-
-
-
-
-
LIMITS
TYP.
0.15
0.615
2.5
10
120
35
Ta=25
MAX.
-
0.665
-
300
-
-
UNIT
V
V
μA
μA
pF
ns
1/3

XBS206S17R-G Datasheet
XBS206S17R-G
TYPICAL PERFORMANCE CHARACTERISTICS
(1) Forward Current vs. Forward Voltage
(2) Reverse Current vs. Reverse Voltage
10 10000
1
Ta=125℃
0.1 75℃
-25℃
25℃
1000
100
10
1
Ta=125℃
100℃
75℃
25℃
0.01
0
0.2 0.4 0.6
FoFrowrawradrdVVolotaltgaege:  VVF (FV(V) )
(3) Forward Voltage vs. Operating Temperature
0.8
0.8
0.6
IF=2A
1.0A
0.4
0.5A
0.2 0.1A
0.1
0
20 40
RReevveerrsseeVVooltlataggee: VVRR(V(V))
(4) Reverse Current vs. Operating Temperature
60
10000
1000
VR=60V
30V
10V
5V
100
10
0.0
-50
0
50 100
OpOepreartiantginTgeTmepmepreartautruer:eT aT(a(℃) )
(5) Inter-Terminal Capacity vs. Reverse Voltage
150
500
400
300
200
100
0
0
Ta=25℃
10 20 30
ReRveevresreseVoVltoaltgaeg:eV RV(RV()V)
40
1
0 50 100 150
OOppeerraattiningg TTeemmppeerraattuurree: TTaa((℃))
(6) Average Forward Current vs. Operating Temperature
4.0
3.0
2.0
1.0
0.0
0
50 100
OOppeerraattiinngg TTeemmppeerraattuurree : TTaa (())
150
2/3


Features Datasheet pdf XBS206S17R-G Schottky Barrier Diode, 2A, 60V Type ETR1613-002a ■FEATURES F orward Voltage Forward Current Repetiti ve Peak Reverse Voltage : VF=0.615V (T YP.) : IF(AVE)=2A : VRM=60V ■ABSOLUT E MAXIMUM RATINGS Ta=25℃ PARAMETER SYMBOL RATINGS UNIT Repetitive Peak Re verse Voltage VRM 60 V Reverse Voltag e (DC) VR 60 V Forward Current (Avera ge) IF(AVE) 2 A Non Continuous Forwar d Surge Current*1 IFSM 45 Junction T emperature Tj 125 Storage Temperature Range Tstg -55~+150 *1: Non cont inuous high amplitude 60Hz half-sine wa ve. A ℃ ℃ ■APPLICATIONS ●Rect ification ●Protection against reverse connection of battery ■PACKAGING INF ORMATION ■MARKING RULE Cathode Bar ①②③④⑤⑥: 206S17(Product Num ber) ⑦⑧ : Assembly Lot Number PRODUCT NAME PRODUCT NAME DEVICE ORI ENTATION XBS206S17R-G SMA (Halogen & Antimony free) XBS206S17R SMA * The “-G” suffix indicates that the prod ucts are Halogen and Antimony free as well as being fully RoHS compliant. * The device orientation is fixed i.
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