CQY37N

CQY37N Vishay Telefunken GaAs Infrared Emitting Diode in Miniature (T–¾) Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics. The diode is case compatible to the BPW17N phototransistor, allowing the user to assemble his own optical interrupters. Features D D D D D Suitable for pulse operation Standard T–¾ lensed miniature package Angle of half intensity ϕ = ± 12° Peak wavelength lp = 950 nm Good spectral matching to Si photodetectors 94 8639 Applications Radiation source in near infrared range Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Forward Current Surge Forward Current Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VR IF IFSM PV Tj Tstg Tsd RthJA Value 5 100 2 170 100 –25...+100 245 450 Unit V mA A mW °C °C °C K/W tp x 100 ms t x3s Document Number 81002 Rev. 2, 20-May-99 www.vishay.de FaxBack +1-408-970-5600 1 (5) CQY37N Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward Voltage Breakdown Voltage Junction Capacitance Radiant Intensity Radiant Power Temp. Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Rise time Fall Time Test Conditions IF = 50 mA, tp 20 ms IR = 100 mA VR = 0 V, f = 1 MHz, E = 0 IF = 50 mA, tp 20 ms IF = 50 mA, tp 20 ms IF = 50 mA x x x Symbol VF ...