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EGP30C Dataheets PDF



Part Number EGP30C
Manufacturers GALAXY ELECTRICAL
Logo GALAXY ELECTRICAL
Description HIGH EFFICIENCY RECTIFIER
Datasheet EGP30C DatasheetEGP30C Datasheet (PDF)

BL GALAXY ELECTRICAL EGP30A(Z)---EGP30K(Z) HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE: 50 --- 800 V CURRENT: 3.0 A FEATURES Low cost Diffused junction Low leakage Low forward voltage drop High surge current capability Easily cleaned with alcohol,Isopropanol and similar s olvents The plastic material carries U/L recognition 94V-0 DO - 27 MECHANICAL DATA Case:JEDEC DO--27,molded plas tic Terminals: Axial lead ,solderable per MIL- STD-750,Method 2026 Polarity: Color band denotes cathode Weight: .

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BL GALAXY ELECTRICAL EGP30A(Z)---EGP30K(Z) HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE: 50 --- 800 V CURRENT: 3.0 A FEATURES Low cost Diffused junction Low leakage Low forward voltage drop High surge current capability Easily cleaned with alcohol,Isopropanol and similar s olvents The plastic material carries U/L recognition 94V-0 DO - 27 MECHANICAL DATA Case:JEDEC DO--27,molded plas tic Terminals: Axial lead ,solderable per MIL- STD-750,Method 2026 Polarity: Color band denotes cathode Weight: 0.041 ounces,1.15grams Mounting pos ition: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unles s otherwise s pecified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. EGP 30A EGP 30B EGP 30C EGP 30D EGP 30F EGP EGP 30G 30J EGP 30K UNITS Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current 9.5mm lead length, @TA=75 Peak forw ard surge current VRRM VRMS VDC IF(AV) 50 35 50 8.3ms single half-sine-w ave superimposed on rated load IFSM Maximum instantaneous forw ard voltage @ 3.0 A VF Maximum reverse current @TA=25 at rated DC blocking voltage @TA=125 IR Maximum reverse recovery time (Note1) trr Typical junction capacitance (Note2) CJ Typical thermal resistance (Note3) RθJA Typical thermal resistance (Note4) RθJL Operating junction temperature range TJ Storage temperature range TSTG NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3.Thermal resistance junction to ambient. 4.Thermal resistance junction to lead. 100 150 200 300 400 600 800 70 105 140 210 280 420 560 100 150 200 300 400 600 800 3.0 V V V A 125.0 A 0.95 1.25 5.0 100.0 50 95 20 8.5 - 55 ---- + 150 - 55 ---- + 150 1.7 75 75 V A ns pF /W /W www.galaxycn.com Document Number 0262010 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES EGP30A(Z)---EGP30K(Z) FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 10 N1. N1. +0.5A trr (+) 25VDC (approx) (-) D.U.T. 1 NONINDUCTIVE OSCILLOSCOPE (NOTE1) (+) PULSE GENERATOR (NOTE2) (-) 0 -0 .2 5 A -1 .0 A 1cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . FIG.2 -- TYPICAL FORWARD CHARACTERISTIC SET TIME BASE FOR 20/30 ns/cm FIG.3 -- FORWARD DERATING CURVE z AVERAGE FORWARD CURRENT AMPERES 100 TJ=25 Pulse Width=300µS 10 EGP30A-EGP30D 1 EGP30F-EGP30G EGP30J-EGP30K 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 3.0 2.0 Single Phase Half Wave 60Hz Resistive or Inductive Load 1.0 0 0 25 50 75 100 125 150 INSTANTANEOUS FORWARD VOLTAGE, VOLTS AMBIENT TEMPERATURE, INSTANTANEOUS FORWARD CURRENT AMPERES JUNCTION CAPACITANCE,pF FIG.4 -- TYPICAL JUNCTION CAPACITANCE 175 150 125 TJ=25 100 75 50 25 0 0.1 EGP30A-EGP30D EGP30F&EGP30K 1 4 10 100 1000 REVERSE VOLTAGE,VOLTS PEAK FORWARD SURGE CURRENT AMPE.


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