thyristor product. CR0640SB Datasheet

CR0640SB product. Datasheet pdf. Equivalent


Part CR0640SB
Description The CR range of protectors are based on the proven technology of the T10 thyristor product
Feature CRxxxx series Description The CR range of protectors are based on the proven technology of the T10 .
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CRxxxx series Description The CR range of protectors are ba CR0640SB Datasheet
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CR0640SB
CRxxxx series
Description
The CR range of protectors are based on the proven
technology of the T10 thyristor product. Designed for
transient voltage protection of telecommunications
equipment, it provides higher power handling than a
conventional avalanche diode (TVS) and when compared to
a GDT offers lower voltage clamping levels and infinite surge
life.
Packaged in a transfer molded DO-214AA surface mount
outline designed for high speed pick & place machines used
in today’s surface mount assembly lines.
Electrical Charecteristics
The electrical characteristics of a CRXXXX device is similar
to that of a self gated Triac, but the CR is a two terminal
device with no gate. The gate function is achieved by an
internal current controlled mechanism.
Like the T.T.S. diodes, the CRXXXX has a standoff voltage
(Vrm) which should be equal to or greater than the operating
voltage of the system to be protected. At this voltage (Vrm)
the current consumption of the CRXXXX is negligible and will
not effect the protected system.
When a transient occurs, the voltage across the CRXXXX
will increase until the breakdown voltage (Vbr) is reached. At
this point the device will operate in a similar way to a T.V.S.
device and is in an avalanche mode.
The voltage of the transient will now be limited and will only
increase by a few volts as the device diverts more current.
As this transient current rises, a level of current through the
device is reached (Ibo) which causes the device to switch to
a fully conductive state such that the voltage across the
device is now only a few volts (Vt). The voltage at which the
device switches from the avalanche mode to the fully
conductive state (Vt) is known as the Breakover Voltage
(Vbo). When the device is in the Vt state, high currents can
be deverted without damage to the CRXXXX due to the low
voltage across the device, since the limiting factor in such
devices is dissipated power (V x I).
Resetting of the device to the non conducting state is
controlled by the current flowing through the device. When
the current falls below a certain value, known as the Holding
Current (Ih), the device resets automatically.
As with the avalanche T.V.S. device, if the CRXXXX is
subjected to a surge current which is beyond its maximum
rating, then the device will fail in short circuit mode, this
ensures that the equipment is ultimately protected.
Selecting A CRXXXX
1. When selecting a CRXXXX device, it is important that the
Vrm of the device is equal to or greater than the operating
voltage of the system.
2. The minimum Holding Current (Ih) must be greater than
the current the system is capable of delivering otherwise the
device will remain conducting following a transient condition.
IT
IH
VT
IRM
IBO
VBR
VRM VBO
MIN
V-I Graph
Illustrating Symbols
and Terms for
the CR Surge
Protection Device.
The CRXXXX Range Can Be Used to Protect Against Surges As Defined In The Following International Standards.
SA SB SC
FCC Rules Part 68/D
Metallic
Longitudinal
10/560µs
10/160µs
50A
100A
100A
150A
100A
200A
Bellcore Specification
TR-NWT-001089
10/1000µs
2/10µs
100v/µs
37A
-
1KV
75A 100A
- 500A
1KV 1KV
ITU K-17 (Formerly CCITT)
Voltage Wave Form
Current Wave Form
100/700µs
5/310µs
-
-
1.5KV
38A
1.5KV
38A
VDE 0433
Voltage Wave Form
Current Wave Form
10/700µs
5/310µs
-
-
2KV 4.0KV
50A 100A
C-NET 131-24
Voltage Wave From
Current Wave Form
0.5/700µs
0.8/310µs
1.0KV
25A
1.0KV
25A
4.0KV
100A
IEC 1000-4-5
(Discharge through 2impendance) I
Voltage Wave Form
8/20µs
1-2/50µs
-
-
100A
300V
250A
500V
ITU K-20
(Formerly CCITT)
Voltage Wave Form
Current Wave Form
10/700µs
5/310µs
1000V
25A
10000V
25A
4000V
100A
52 w w w . l i t t e l f u s e . c o m



CR0640SB
CRxxxx series
Specifications
Electrical Charecteristics (Tj=25°C)
SYMBOL
VRM
VBR
VBO
VT
PARAMETER
Stand-off Coltage
Breakdown Voltage
Breakover Voltage
On-State Voltage
SYMBOL
IRM
IBO
IH
PARAMETER
Stand-off Current
Breakover Current
Holding Current
THERMAL DATA
T stg Storage and Operating Junction Temperature range
Tj
TL Maximum Temperature For Soldering
(For period of 10 seconds max)
VALUE
-40 to +150
150
230
UNIT
°C
°C
°C
MAXIMUM RATINGS
SUFFIX
SA
Ipp 10x160µs Amps
Ipp 10x560µs Amps
ITSM 60Hz Amps
DI/dt Amps/µs
100
50
20
500
MAXIMUM RATINGS
SUFFIX
SB
Ipp 10x160µs Amps 150
Ipp 10x560µs Amps 100
ITSM 60Hz Amps
DI/dt Amps/µs
30
500
MAXIMUM RATINGS
SUFFIX
SC
Ipp 2x10µs Amps 500
Ipp 10x160µs Amps 200
Ipp 10x560µs Amps 100
ITSM 60Hz Amps
dI/dt Amps/µs
60
500
Stock
Number
CR 0300 SA
CR 0640 SA
CR 0720 SA
CR 0800 SA
CR 1100 SA
CR 1300 SA
CR 1500 SA
CR 1800 SA
CR 2300 SA
CR 2600 SA
CR 3100 SA
CR 3500 SA
CR 0300 SB
CR 0640 SB
CR 0720 SB
CR 0800 SB
CR 1100 SB
CR 1300 SB
CR 1500 SB
CR 1800 SB
CR 2300 SB
CR 2600 SB
CR 3100 SB
CR 3500 SB
CR 0300 SC
CR 0640 SC
CR 0720 SC
CR 0800 SC
CR 1100 SC
CR 1300 SC
CR 1500 SC
CR 1800 SC
CR 2300 SC
CR 2600 SC
CR 3100 SC
CR 3500 SC
Device
Code
030A
064A
072A
080A
110A
130A
150A
180A
230A
260A
310A
350A
030B
064B
072B
080B
110B
130B
150B
180B
230B
260B
310B
350B
030C
064C
072C
080C
110C
130C
150C
180C
230C
260C
310C
350C
Reverse
Stand-off
Voltage
25
58
65
75
90
120
140
160
190
220
275
320
25
58
65
75
90
120
140
160
190
220
275
320
25
58
65
75
90
120
140
160
190
220
275
320
Maximum
Reverse
Leakage
µA
Maximum
Breakover
Voltage
@Ibo
Maximum
Breakover
Current
mA
5 40 800
5 77 800
5 88 800
5 98 800
5 130 800
5 160 800
5 180 800
5 220 800
5 260 800
5 300 800
5 350 800
5 400 800
5 40 800
5 77 800
5 88 800
5 98 800
5 130 800
5 160 800
5 180 800
5 220 800
5 260 800
5 300 800
5 350 800
5 400 800
5 40 800
5 77 800
5 88 800
5 98 800
5 130 800
5 160 800
5 180 800
5 220 800
5 260 800
5 300 800
5 350 800
5 400 800
Minimum
Holding
Current
mA
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
Maximum
On-State
Voltage
@1A
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Typical
Capacitance
@1MHz 2v bias
pF
100
60
60
60
60
40
40
40
30
30
30
30
100
60
60
60
60
40
40
40
30
30
30
30
200
120
120
120
120
80
80
80
60
60
60
60
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