LOW POWER USE NON-INSULATED TYPE/ GLASS PASSIVATION TYPE
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉
CR08AS
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR08AS
OUTLINE ...
Description
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉
CR08AS
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR08AS
OUTLINE DRAWING
Dimensions in mm
4.4±0.1 1.6±0.2
1.5±0.1
2.5±0.1
1
0.8 MIN
2
3
0.5±0.07 0.4±0.07 1.5±0.1 1.5±0.1 (Back side) 2 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL 0.4 +0.03 –0.05
3
IT (AV) ........................................................................ 0.8A VDRM ..............................................................400V/600V IGT ......................................................................... 100µ A APPLICATION Solid state relay, strobe flasher, ignitor, hybrid IC
1
SOT-89
MAXIMUM RATINGS
Symbol VRRM VRSM VR (DC) VDRM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage
V1 V1
Voltage class 8 (marked “AD”) 400 500 320 400 320 12 (marked “AF”) 600 720 480 600 480
3.9±0.3
Unit V V V V V
Symbol IT (RMS) IT (AV) ITSM I 2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg —
Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing
Conditions Commercial frequency, sine half wave, 180° conduction, Ta=51° CV2 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Ratings 1.26 0.8 10 0.42 0.5 0.1 6 6 0.3 –40 ~ +125 –40 ~ +125
Unit A A A A2s W W V V A °C °C mg
Peak gate power dissipation Average gate power dissip...
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