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VSKH41-12P Dataheets PDF



Part Number VSKH41-12P
Manufacturers Vishay
Logo Vishay
Description ADD-A-PAK Generation VII Power Modules
Datasheet VSKH41-12P DatasheetVSKH41-12P Datasheet (PDF)

www.vishay.com VSK.41.., VSK.56.. Series Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A ADD-A-PAK PRODUCT SUMMARY IT(AV) or IF(AV) Type 45 A/60 A Modules - Thyristor, Standard MECHANICAL DESCRIPTION The ADD-A-PAK generation VII, new generation of ADD-A-PAK module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simp.

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www.vishay.com VSK.41.., VSK.56.. Series Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A ADD-A-PAK PRODUCT SUMMARY IT(AV) or IF(AV) Type 45 A/60 A Modules - Thyristor, Standard MECHANICAL DESCRIPTION The ADD-A-PAK generation VII, new generation of ADD-A-PAK module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with minimized number of interfaces. FEATURES • High voltage • Industrial standard package • Low thermal resistance • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 BENEFITS • Excellent thermal performances obtained by the usage of exposed direct bonded copper substrate • Up to 1600 V • High surge capability • Easy mounting on heatsink ELECTRICAL DESCRIPTION These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS, and battery charger. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IT(AV) or IF(AV) IO(RMS) ITSM, IFSM I2t I2t VRRM TStg TJ 85 °C As AC switch 50 Hz 60 Hz 50 Hz 60 Hz Range VSK.41 45 100 850 890 3.61 3.30 36.1 400 to 1600 -40 to 125 -40 to 125 VSK.56 60 135 1200 1256 7.20 6.57 72 UNITS A kA2s kA2s V °C Revision: 14-Jan-14 1 Document Number: 94630 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VSK.41 VSK.56 04 06 08 10 12 14 16 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 400 600 800 1000 1200 1400 1600 VSK.41.., VSK.56.. Series Vishay Semiconductors VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 500 700 900 1100 1300 1500 1700 VDRM, MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE, GATE OPEN CIRCUIT V 400 600 800 1000 1200 1400 1600 IRRM, IDRM AT 125 °C mA 15 ON-STATE CONDUCTION PARAMETER SYMBOL Maximum average on-state current (thyristors) Maximum average forward current (diodes) IT(AV) IF(AV) TEST CONDITIONS 180° conduction, half sine wave, TC = 85 °C VSK.41 VSK.56 UNITS 45 60 Maximum continuous RMS on-state current, as AC switch IO(RMS) or I(RMS) I(RMS) Maximum peak, one-cycle non-repetitive on-state or forward current ITSM or IFSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t (1) Maximum value or threshold voltage VT(TO) (2) Maximum value of on-state  slope resistance Maximum peak on-state or forward voltage Maximum non-repetitive rate of rise of turned on current Maximum holding current Maximum latching current Notes (1) I2t for time tx = I2t x tx (2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2 (3) 16.7 % x  x IAV < I <  x IAV (4) I >  x IAV rt (2) VTM VFM dI/dt IH IL t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms No voltage reapplied 100 % VRRM reapplied Sinusoidal half wave, initial TJ = TJ maximum t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms No voltage reapplied 100 % VRRM reapplied Initial TJ = TJ maximum t = 0.1 ms to 10 ms, no voltage reapplied  TJ = TJ maximum Low level (3) High level (4) TJ = TJ maximum Low level (3) High level (4) TJ = TJ maximum ITM =  x IT(AV) IFM =  x IF(AV) TJ = 25 °C TJ = 25 °C, from 0.67 VDRM, ITM =  x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs TJ = 25 °C, anode supply = 6 V, resistive load, gate open circuit TJ = 25 °C, anode supply = 6 V, resistive load 100 850 890 715 750 3.61 3.30 2.56 2.33 36.1 1.08 1.12 4.7 4.5 1.81 135 1200 1256 1000 1056 7.20 6.57 5.10 4.56 72 0.91 1.02 4.27 3.77 A kA2s kA2s V m 1.7 V 150 A/μs 200 400 400 mA Revision: 14-Jan-14 2 Document Number: 94630 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VSK.41.., VSK.56.. Series Vishay Semiconductors TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage Maximum gate voltage required to trigger Maximum gate current required to trigger Maximum gate voltage that will not trigger Maximum gate current that will not trigger SYMBOL PGM PG(AV) IGM - VGM VGT IGT VGD IGD TEST CONDITIONS TJ = -40 °C TJ = 25 °C TJ = 125 °C Anode supply = 6 V resistive load TJ = -40 °C TJ = 25 °C TJ = 125 °C Anode supply = 6 V resistive load TJ = 125 °C, rated VDRM applied .


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