www.vishay.com
VSK.41.., VSK.56.. Series
Vishay Semiconductors
ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A
ADD-A-PAK
PRODUCT SUMMARY
IT(AV) or IF(AV) Type
45 A/60 A Modules - Thyristor, Standard
MECHANICAL DESCRIPTION
The ADD-A-PAK generation VII, new generation of ADD-A-PAK module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with minimized number of interfaces.
FEATURES • High voltage • Industrial standard package • Low thermal resistance • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS • Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate • Up to 1600 V • High surge capability • Easy mounting on heatsink
ELECTRICAL DESCRIPTION These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS, and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IT(AV) or IF(AV) IO(RMS) ITSM, IFSM
I2t
I2t VRRM TStg TJ
85 °C As AC switch 50 Hz 60 Hz 50 Hz 60 Hz
Range
VSK.41 45 100 850 890 3.61 3.30 36.1
400 to 1600 -40 to 125 -40 to 125
VSK.56 60 135
1200 1256 7.20 6.57
72
UNITS
A
kA2s kA2s
V °C
Revision: 14-Jan-14
1 Document Number: 94630
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE CODE
VSK.41 VSK.56
04 06 08 10 12 14 16
VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
V
400
600
800
1000
1200
1400
1600
VSK.41.., VSK.56.. Series
Vishay Semiconductors
VRSM, MAXIMUM NON-REPETITIVE PEAK
REVERSE VOLTAGE V
500
700
900
1100
1300
1500
1700
VDRM, MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT V
400
600
800
1000
1200
1400
1600
IRRM, IDRM AT 125 °C
mA
15
ON-STATE CONDUCTION
PARAMETER
SYMBOL
Maximum average on-state current (thyristors) Maximum average forward current (diodes)
IT(AV) IF(AV)
TEST CONDITIONS
180° conduction, half sine wave, TC = 85 °C
VSK.41 VSK.56 UNITS 45 60
Maximum continuous RMS on-state current, as AC switch
IO(RMS)
or I(RMS)
I(RMS)
Maximum peak, one-cycle non-repetitive on-state or forward current
ITSM or IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t (1)
Maximum value or threshold voltage
VT(TO) (2)
Maximum value of on-state slope resistance
Maximum peak on-state or forward voltage
Maximum non-repetitive rate of rise of turned on current
Maximum holding current
Maximum latching current
Notes (1) I2t for time tx = I2t x tx (2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2 (3) 16.7 % x x IAV < I < x IAV (4) I > x IAV
rt (2) VTM VFM dI/dt
IH IL
t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms
No voltage reapplied
100 % VRRM reapplied
Sinusoidal half wave, initial TJ = TJ maximum
t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms
No voltage reapplied
100 % VRRM reapplied
Initial TJ = TJ maximum
t = 0.1 ms to 10 ms, no voltage reapplied
TJ = TJ maximum
Low level (3) High level (4)
TJ = TJ maximum
Low level (3) High level (4)
TJ = TJ maximum
ITM = x IT(AV) IFM = x IF(AV)
TJ = 25 °C
TJ = 25 °C, from 0.67 VDRM, ITM = x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs
TJ = 25 °C, anode supply = 6 V, resistive load, gate open circuit
TJ = 25 °C, anode supply = 6 V, resistive load
100
850 890 715 750 3.61 3.30 2.56 2.33
36.1
1.08 1.12 4.7 4.5
1.81
135
1200 1256 1000 1056 7.20 6.57 5.10 4.56
72
0.91 1.02 4.27 3.77
A
kA2s kA2s
V m
1.7 V
150 A/μs
200 400 400
mA
Revision: 14-Jan-14
2 Document Number: 94630
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VSK.41.., VSK.56.. Series
Vishay Semiconductors
TRIGGERING
PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage
Maximum gate voltage required to trigger
Maximum gate current required to trigger
Maximum gate voltage that will not trigger Maximum gate current that will not trigger
SYMBOL PGM PG(AV) IGM - VGM
VGT
IGT
VGD IGD
TEST CONDITIONS
TJ = -40 °C TJ = 25 °C TJ = 125 °C
Anode supply = 6 V resistive load
TJ = -40 °C TJ = 25 °C TJ = 125 °C
Anode supply = 6 V resistive load
TJ = 125 °C, rated VDRM applied
.