EFFICIENCY RECTIFIER. US2B Datasheet

US2B RECTIFIER. Datasheet pdf. Equivalent


MIC US2B
SURFACE MOUNT HIGH EFFICIENCY RECTIFIER
US2A THRU US2M
VOLTAGE RANGE
CURRENT
50 to 1000 Volts
2.0 Ampere
FEATURES
Plastic package has UL flammability
Classification 94V-0
Glass Passivated chip junction
Built in strain relief
Fast switching speed for high efficiency
High temperature soldering guaranteed:
250/10 seconds
MECHANICAL DATA
Case: JEDED DO-214AA transfer molded plastic
Terminals: Solder plated, Solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Weight: 0.003 ounce, 0.093 gram
DO-214AA(SMB)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
MAXIMUM RATINGS & THERMAL CHARACTERISTICS
PARAMETELS
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
At TL =105(NOTE 1)
Peak Forward Surge Current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum lnstantaneous Forward Voltage at 2.0A
Maximum DC Reverse Current TA=25
At rated DC blocking voltage at TA=125
Maximum Reverse Recovery Time
Test conditions IF=0.5A, IR=1.0A, IRR=0.25A
SYMBOLS
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
trr
US2A
50
35
50
US2B
100
70
100
1.0
50
US2D
200
140
200
US2G
400
280
400
2.0
US2J
600
420
600
US2K
800
560
800
50
1.3 1.7
5.0
100
100
Typical Junstion Capacitance
(Measured at 1.0MHz and applied reverse voltage of 4.0V)
CJ
50
30
Typical Thermal Resistance (NOTE 1)
RθJA
RθJL
75
17
Operating Junction Temperature
TJ
(-55 to +150)
Storage Tempetature Rang
TSTG
(-55 to +150)
Notes:
1. Thermal resistance from Junction to ambient and from junction to lead mounted on
P.C.B. with 0.3×0.3(8.0 × 8.0mm) copper pad areas.
US2M
1000
700
1000
UNIT
Volts
Volts
Volts
Amps
Amps
Volts
µA
nS
pF
/W
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US2B Datasheet
Recommendation US2B Datasheet
Part US2B
Description SURFACE MOUNT HIGH EFFICIENCY RECTIFIER
Feature US2B; SURFACE MOUNT HIGH EFFICIENCY RECTIFIER US2A THRU US2M VOLTAGE RANGE CURRENT 50 to 1000 Volts 2.0.
Manufacture MIC
Datasheet
Download US2B Datasheet




MIC US2B
SURFACE MOUNT HIGH EFFICIENCY RECTIFIER
US2A THRU US2M
VOLTAGE RANGE
CURRENT
50 to 1000 Volts
2.0 Ampere
RATING AND CHRACTERISTIC CURVES US2A THRU US2M
FIG.1-TYPICAL FORWARD CURRENT
DERATING CURVE
3.0
2.0
FIG.2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
60
8.3ms Single Half Sine-Wave
(JEDEC Method) TJ= T jmax
40
1.0 Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0.375(9.5mm) Lead Length
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE, (° C)
175
FIG.3-TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10
20
1 Cycle
0
12
4 6 8 10
20
40 60 100
NUMBER OF CYCLES AT 60 Hz
FIG.4-TYPICAL REVERSE
CHARACTERISTICS
100
1.0
0.1
0.01
TJ=25° C
Pulse Width=300us
1% Duty Cycle
0.001
0.4 0.6 0.8 1.0
1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE,(V)
FIG.5-TYPICAL JUNCTION CAPACITANCE
100
US2A-US2G
10 US2J-US2M
TJ =25° C
f=1MHz
Vsig=50mVp-p
1
0.1
1.0 10
REVERSE VOLTAGE,(V)
100
10
TJ=100° C
1.0
TJ=25
0.1
0
20 40 60 80 100 120
PERCENT OF RATED PEAK
REVERSE VOLTAGE,(%)
140
F1G.6-TEST CIRCUIT DIAGRAM AND
REVERSE RECOVERY TIME CHARACTERISTIC
50Ω 10Ω
NONINDUCTIVE NONINDUCTIVE
+0.5A
Trr
(-)
(+)
25 Vdc
(approx.)
(-)
D.U.T.
1Ω
NON
INDUCTIVE
PULSE
GENERATIOR
(NOTE 2)
(+)
OSCILLOSCOPE
(NOTE 1)
0
-0.25A
-1.0A
1cm
NOTES : 1.Rise Time=7ns max. Input Impedance=
1 magohm. 22pF
2.Rise time=10ns max. Source Impedance=
50 ohms
SET TIME BASE FOR
50/100ns/cm
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