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CR12AM

Mitsubishi Electric Semiconductor

THYRISTOR

MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR12AM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR12AM OUTLI...


Mitsubishi Electric Semiconductor

CR12AM

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MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR12AM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR12AM OUTLINE DRAWING 10.5 MAX 3.2±0.2 Dimensions in mm 4.5 4 1.3 16 MAX ∗ 12.5 MIN 3.8 MAX TYPE NAME VOLTAGE CLASS 1.0 0.8 2.5 7.0 φ3.6±0.2 2.5 4.5 0.5 2.6 123 24 1 2 3 4 ∗ Measurement point of case temperature IT (AV) ......................................................................... 12A VDRM ..............................................................400V/600V IGT ..........................................................................30mA APPLICATION Switching mode power supply, ECR, motor control 3 1 CATHODE ANODE GATE ANODE TO-220 MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) VDRM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state Voltage class 8 400 500 320 400 320 12 600 720 480 600 480 Unit V V V V V Symbol IT (RMS) IT (AV) ITSM I2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg — Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Conditions Commercial frequency, sine half wave, 180° conduction, Tc =91°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 18.8 12.0 360 544 5 0.5 6 10 2 –40 ~ +125 –40 ~ +125 Unit A A A A2s W W V V A °C °C g Peak gate power dissipation Average gate power dissipation Peak...




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