CR12BM

MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR12BM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR12BM IT (AV) ......................................................................... 12A VDRM ..............................................................400V/600V IGT ..........................................................................30mA APPLICATION Automatic strobe flasher OUTLINE DRAWING 1.3 4 10.5 MIN Dimensions in mm 1.5 MAX 3.8 MAX 8.6 12.5 MIN TYPE NAME VOLTAGE CLASS 1 3 1 ∗ 0.5 2.6 1 CATHODE 2 ANODE 3 GATE 4 ANODE ∗ Measurement point of case temperature 4.5 0.8 2.5 2.5 10.5 TO-220C 2 MAXIMUM RATINGS Symbol Parameter VRRM VRSM VR (DC) VDRM VD (DC) Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage Voltage class 8 12 400 600 500 720 320 480 400 600 320 480 Symbol IT (RMS) IT (AV) ITSM I2t Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing PGM PG (AV) VFGM VRGM IFGM Tj Tstg — Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Weight Conditions Commercial frequency, sine half wave, 180° conduction, Tc=91°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ratings 18.8 12.0...