Document
BCR25PM-14LJ
700V - 25A - Triac
Medium Power Use
Features
• IT (RMS) : 25 A • VDRM : 800 V (Tj=125°C) • Tj: 150 °C • IFGTI, IRGTI, IRGT III : 50 mA
Outline
RENESAS Package code: PRSS0003AA-A (Package name: TO-220F )
Preliminary Datasheet
R07DS1224EJ0100 Rev.1.00
Jul 28, 2014
• Insulated Type • Planar Passivation Type • Viso : 2000V • UL Recognized: File No. E223904
12 3
2
3 1
1. T1 Terminal 2. T2 Terminal 3. Gate Terminal
Applications
Vacuum cleaner, electric heater, light dimmer, copying machine, and other general controlling devices
Maximum Ratings
Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1
Symbol VDRM
VDSM
Voltage class 14 800 700 840
Unit Conditions
V Tj = 125°C Tj = 150°C
V
Parameter RMS on-state current
Surge on-state current
I2t for fusion
Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction Temperature Storage temperature Mass Isolation voltage
Notes: 1. Gate open.
Symbol IT (RMS)
ITSM
I2t
PGM PG (AV) VGM
IGM Tj Tstg — Viso
Ratings 25
250
262
5 0.5 10 2 –40 to +150 –40 to +150 2.0 2000
Unit A
A
A2s
W W V A °C °C g V
Conditions Commercial frequency, sine full wave 360° conduction, Tc = 60°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Typical value Ta = 25°C, AC 1 minute, T1 • T2 • G terminal to case
R07DS1224EJ0100 Rev.1.00 Jul 28, 2014
Page 1 of 7
BCR25PM-14LJ
Preliminary
Electrical Characteristics
Parameter Repetitive peak off-state current
Symbol IDRM
On-state voltage Gate trigger voltageNote2
Gate trigger curentNote2
VTM
Ι VFGTΙ ΙΙ VRGTΙ ΙΙΙ VRGTΙΙΙ Ι IFGTΙ ΙΙ IRGTΙ ΙΙΙ IRGTΙΙΙ
Min. — — —
— — — — — —
Typ. — — —
— — — — — —
Max. 3.0 5.0 1.5
2.0 2.0 2.0 50 50 50
Unit mA mA V
V V V mA mA mA
Test conditions Tj = 125°C, VDRM applied Tj = 150°C, VDRM applied Tc = 25°C, ITM = 40 A, instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω
Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω
Gate non-trigger voltage
VGD 0.2 —
—
V Tj = 125°C, VD = 1/2 VDRM
Thermal resistance
0.1 —
—
V Tj = 150°C, VD = 1/2 VDRM
Rth (j-c)
—
—
3.0 °C/W Junction to caseNote3
Critical-rate of rise of off-state
(dv/dt)c 10
—
— V/μs Tj = 125°C
commutation voltageNote4
1 — — V/μs Tj = 150°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. 4. Test conditions of the critical-rate of rise of off-state commutation voltage are shown in the table below.
5. Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it’s advisable that heatsink is electrically floating.
Test conditions
1. Junction temperature Tj = 125°C/150°C
2. Rate of decay of on-state commutating current (di/dt)c = –13 A/ms
3. Peak off-state voltage VD = 400 V
Commutating voltage and current waveforms (inductive load)
Supply Voltage
Time
Main Current
Main Voltage (dv/dt)c
(di/dt)c Time
Time VD
R07DS1224EJ0100 Rev.1.00 Jul 28, 2014
Page 2 of 7
BCR25PM-14LJ
Performance Curves
Maximum On-State Characteristics
103 Ta = 25°C
102
On-State Current (A)
101
Gate Voltage (V)
100 0.5
1.0 1.5 2.0 2.5 3.0
On-State Voltage (V)
3.5
Gate Characteristics (I, II and III)
5
3 2 VGM = 10 V
101 7 5 VGT = 2.0 V 3 2
100 7 5
3 2
PG(AV) = 0.5 W
PGM = 5 W
IGM = 2 A
10–1 7 IFGT I, IRGT I, IRGT III 5 101 2 3 5 7102 2 3
VGD = 0.1 V 5 7103 2 3 5 7104
Gate Current (mA)
Gate Trigger Voltage vs. Junction Temperature
103 Typical Example
102
Gate Trigger Voltage (Tj = t°C) Gate Trigger Voltage (Tj = 25°C) × 100 (%)
101 -40
0
40 80 120 160
Junction Temperature (°C)
R07DS1224EJ0100 Rev.1.00 Jul 28, 2014
Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C)
Transient Thermal Impedance (°C/W)
Surge On-State Current (A)
Preliminary
Rated Surge On-State Current
400
300
200
100
0 100 101 102
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs. Junction Temperature
103 Typical Example
102 IFGT I IRGT I IRGT III
101 -40 0 40 80 120 160
Junction Temperature (°C)
Maximum Transient Thermal Impedance Characteristics (Junction to case)
102 103 104 105 4
3
2
1
10-1 100 101 102 Conduction Time (Cycles at 50Hz)
Page 3 of 7
On-State Power Dissipation (W)
BCR25PM-14LJ
Maximum On-State Power Dissipation
40
30
20
10 360° Conduction Resistive, inductive loads
0 0 10 20 30 40
RMS On-State Current (A)
Allowable Ambient Temperature vs. RMS On-State Current
160 160 160 t2.3
140 120 120 t2.3 100 100 t2.3
120 Curves apply regardless
100 of conduction angle Resistive, inductive loads
80 Natural convection All fins are black
60 painted aluminum and greased
40 20
0 0 10 20 30 40
RMS On-State Current (A)
Breakover Voltage vs. Junction Temperature
103 Typical Example
102
Ambient Temperature (°C)
× 100 (%)
(Tj = t°C) (Tj = 25°C)
Breakover Voltage Breakover Voltage
101 -40
0
40 80.