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BCR25PM-14LJ Dataheets PDF



Part Number BCR25PM-14LJ
Manufacturers Renesas
Logo Renesas
Description Triac
Datasheet BCR25PM-14LJ DatasheetBCR25PM-14LJ Datasheet (PDF)

BCR25PM-14LJ 700V - 25A - Triac Medium Power Use Features • IT (RMS) : 25 A • VDRM : 800 V (Tj=125°C) • Tj: 150 °C • IFGTI, IRGTI, IRGT III : 50 mA Outline RENESAS Package code: PRSS0003AA-A (Package name: TO-220F ) Preliminary Datasheet R07DS1224EJ0100 Rev.1.00 Jul 28, 2014 • Insulated Type • Planar Passivation Type • Viso : 2000V • UL Recognized: File No. E223904 12 3 2 3 1 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal Applications Vacuum cleaner, electric heater, light dimmer, copying m.

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BCR25PM-14LJ 700V - 25A - Triac Medium Power Use Features • IT (RMS) : 25 A • VDRM : 800 V (Tj=125°C) • Tj: 150 °C • IFGTI, IRGTI, IRGT III : 50 mA Outline RENESAS Package code: PRSS0003AA-A (Package name: TO-220F ) Preliminary Datasheet R07DS1224EJ0100 Rev.1.00 Jul 28, 2014 • Insulated Type • Planar Passivation Type • Viso : 2000V • UL Recognized: File No. E223904 12 3 2 3 1 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal Applications Vacuum cleaner, electric heater, light dimmer, copying machine, and other general controlling devices Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Voltage class 14 800 700 840 Unit Conditions V Tj = 125°C Tj = 150°C V Parameter RMS on-state current Surge on-state current I2t for fusion Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction Temperature Storage temperature Mass Isolation voltage Notes: 1. Gate open. Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — Viso Ratings 25 250 262 5 0.5 10 2 –40 to +150 –40 to +150 2.0 2000 Unit A A A2s W W V A °C °C g V Conditions Commercial frequency, sine full wave 360° conduction, Tc = 60°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, T1 • T2 • G terminal to case R07DS1224EJ0100 Rev.1.00 Jul 28, 2014 Page 1 of 7 BCR25PM-14LJ Preliminary Electrical Characteristics Parameter Repetitive peak off-state current Symbol IDRM On-state voltage Gate trigger voltageNote2 Gate trigger curentNote2 VTM Ι VFGTΙ ΙΙ VRGTΙ ΙΙΙ VRGTΙΙΙ Ι IFGTΙ ΙΙ IRGTΙ ΙΙΙ IRGTΙΙΙ Min. — — — — — — — — — Typ. — — — — — — — — — Max. 3.0 5.0 1.5 2.0 2.0 2.0 50 50 50 Unit mA mA V V V V mA mA mA Test conditions Tj = 125°C, VDRM applied Tj = 150°C, VDRM applied Tc = 25°C, ITM = 40 A, instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Gate non-trigger voltage VGD 0.2 — — V Tj = 125°C, VD = 1/2 VDRM Thermal resistance 0.1 — — V Tj = 150°C, VD = 1/2 VDRM Rth (j-c) — — 3.0 °C/W Junction to caseNote3 Critical-rate of rise of off-state (dv/dt)c 10 — — V/μs Tj = 125°C commutation voltageNote4 1 — — V/μs Tj = 150°C Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. 4. Test conditions of the critical-rate of rise of off-state commutation voltage are shown in the table below. 5. Make sure that your finished product containing this device meets your safe isolation requirements. For safety, it’s advisable that heatsink is electrically floating. Test conditions 1. Junction temperature Tj = 125°C/150°C 2. Rate of decay of on-state commutating current (di/dt)c = –13 A/ms 3. Peak off-state voltage VD = 400 V Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current Main Voltage (dv/dt)c (di/dt)c Time Time VD R07DS1224EJ0100 Rev.1.00 Jul 28, 2014 Page 2 of 7 BCR25PM-14LJ Performance Curves Maximum On-State Characteristics 103 Ta = 25°C 102 On-State Current (A) 101 Gate Voltage (V) 100 0.5 1.0 1.5 2.0 2.5 3.0 On-State Voltage (V) 3.5 Gate Characteristics (I, II and III) 5 3 2 VGM = 10 V 101 7 5 VGT = 2.0 V 3 2 100 7 5 3 2 PG(AV) = 0.5 W PGM = 5 W IGM = 2 A 10–1 7 IFGT I, IRGT I, IRGT III 5 101 2 3 5 7102 2 3 VGD = 0.1 V 5 7103 2 3 5 7104 Gate Current (mA) Gate Trigger Voltage vs. Junction Temperature 103 Typical Example 102 Gate Trigger Voltage (Tj = t°C) Gate Trigger Voltage (Tj = 25°C) × 100 (%) 101 -40 0 40 80 120 160 Junction Temperature (°C) R07DS1224EJ0100 Rev.1.00 Jul 28, 2014 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Transient Thermal Impedance (°C/W) Surge On-State Current (A) Preliminary Rated Surge On-State Current 400 300 200 100 0 100 101 102 Conduction Time (Cycles at 60Hz) Gate Trigger Current vs. Junction Temperature 103 Typical Example 102 IFGT I IRGT I IRGT III 101 -40 0 40 80 120 160 Junction Temperature (°C) Maximum Transient Thermal Impedance Characteristics (Junction to case) 102 103 104 105 4 3 2 1 10-1 100 101 102 Conduction Time (Cycles at 50Hz) Page 3 of 7 On-State Power Dissipation (W) BCR25PM-14LJ Maximum On-State Power Dissipation 40 30 20 10 360° Conduction Resistive, inductive loads 0 0 10 20 30 40 RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current 160 160 160 t2.3 140 120 120 t2.3 100 100 t2.3 120 Curves apply regardless 100 of conduction angle Resistive, inductive loads 80 Natural convection All fins are black 60 painted aluminum and greased 40 20 0 0 10 20 30 40 RMS On-State Current (A) Breakover Voltage vs. Junction Temperature 103 Typical Example 102 Ambient Temperature (°C) × 100 (%) (Tj = t°C) (Tj = 25°C) Breakover Voltage Breakover Voltage 101 -40 0 40 80.


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