Silicon N-Channel MOS FET
H7N1005DL, H7N1005DS
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS (on) = 85 mΩ ...
Description
H7N1005DL, H7N1005DS
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS (on) = 85 mΩ typ.
Low drive current Capable of 4.5 V gate drive
Outline
REJ03G1736-0100 Rev.1.00
Sep 19, 2008
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) )
4
123
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) )
D 4
123
G S
1. Gate 2. Drain 3. Source 4. Drain
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Value at Tc = 25°C
Symbol
VDSS
VGSS
ID ID (pulse) Note 1
IDR IAP Note 2 EAR Note 2 Pch Note 3
Tch
Tstg
Value 100 ±20 12 30 12
8 6.4 20 150 –55 to +150
(Ta = 25°C)
Unit V V A A A A mJ W °C °C
REJ03G1736-0100 Rev.1.00 Sep 19, 2008 Page 1 of 8
H7N1005DL, H7N1005DS
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
100
—
—
V ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
—
—
V IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS — — ±10 µA VGS = ±16 V, VDS = 0
Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance
Forward transfer admittance
IDSS — — 10 µA VDS = 100 V, VGS = 0
VGS (off)
1.5
...
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