H7N1005DS

H7N1005DL, H7N1005DS Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance RDS (on) = 85 mΩ typ. Low drive current Capable of 4.5 V gate drive Outline REJ03G1736-0100 Rev.1.00 Sep 19, 2008 RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) 4 123 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) D 4 123 G S 1. Gate 2. Drain 3. Source 4. Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Value at Tc = 25°C Symbol VDSS VGSS ID ID (pulse) Note 1 IDR IAP Note 2 EAR Note 2 Pch Note 3 Tch Tstg Value 100 ±20 12 30 12 8 6.4 20 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C °C REJ03G1736-0100 Rev.1.00 Sep 19, 2008 Page 1 of 8 H7N1005DL, H7N1005DS Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 100 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance IDSS — — 10 µA VDS = 100 V, VGS = 0 VGS (off) 1.5 ...