HMIC Silicon PIN Diode SP3T Switch
MASW-011053
HMIC Silicon PIN Diode SP3T Switch with Integrated Bias Network 2 - 18 GHz
Rev. V1
Features
Broad Bandw...
Description
MASW-011053
HMIC Silicon PIN Diode SP3T Switch with Integrated Bias Network 2 - 18 GHz
Rev. V1
Features
Broad Bandwidth Specified up to 18 GHz Usable up to 26 GHz Integrated Bias Network Low Insertion Loss / High Isolation Fully Monolithic Glass Encapsulate Construction RoHS Compliant* and 260°C Reflow Compatible
Description
The MASW-011053 device is a SP3T broad band switch with integrated bias networks utilizing MACOM’s patented HMIC (Heterolithic Microwave Integrated Circuit) process. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while gold backside metallization allows for manual or automatic chip bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders or electrically conductive silver epoxy.
Ordering Information1
Part Number
Package
MASW-011053-47300G
Die in Gel Pack
MASW-011053-47300W 1. Die quantity varies.
Die in Waffle Pack
Functional Diagram
J5 J3
J6
C
J2 C
C
L SW3
SW2
L SW1
L C
L C
C
J4
C C
J8 J1 J7
Pin Configuration2
Pin Function J1 Antenna J2 RFIN J3 RFIN J4 RFIN J5 Bias of J2 J6 Bias of J3 J7 Bias of J4 J8 Bias of Antenna 2. The exposed metallization on the ...
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