TGF2023-2-02

Applications Defense & Aerospace Broadband Wireless TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT Product Features Frequency Range: DC - 18 GHz 40.1 dBm Nominal PSAT at 3 GHz 73.3% Maximum PAE 21 dB Nominal Power Gain at 3 GHz Bias: VD = 12 - 32 V, IDQ = 50 - 250 mA Technology: TQGaN25 on SiC Chip Dimensions: 0.82 x 0.92 x 0.10 mm Functional Block Diagram General Description The TriQuint TGF2023-2-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-2-02 is designed using TriQuint’s proven TQGaN25 production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. Pad Configuration Pad No. 1-2 3 Backside Symbol VG / RF IN VD / RF OUT Source / Ground The TGF2023-2-02 typically provides 40.1 dBm of saturated output power with power gain of 21 dB at 3 GHz. The maximum power added efficiency is 73.3 % which makes the TGF2023-2-02 appropriate for high efficiency applications. Lead-free and RoHS compliant Ordering Information Part ECCN Description TGF2023-2-02 EAR99 12 Watt GaN HEMT Datasheet: Rev C 09-27-13 © 2013 TriQuint - 1 of 14 - Disclaimer: Subject to change without notice www.triquint.com TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT Absolute Maximum Ratings Recommended Operating Conditions Parameter Value Drain to Gate Voltage (VDG) Drain Voltage (VD) Gate Voltage Range (VG) Drain Current (ID) Gate Curr...