Applications
Defense & Aerospace Broadband Wireless
TGF2023-2-10
50 Watt Discrete Power GaN on SiC HEMT
Product Features
Frequency Range: DC - 18 GHz 47.3 dBm Nominal PSAT at 3 GHz 69.5% Maximum PAE 19.8 dB Nominal Power Gain at 3 GHz Bias: VD = 12 - 32 V, IDQ = 200 - 1000 mA Technology: TQGaN25 on SiC Chip Dimensions: 0.82 x 2.48 x 0.10 ...