Efficient Rectifiers. HER305 Datasheet

HER305 Rectifiers. Datasheet pdf. Equivalent

HER305 Datasheet
Recommendation HER305 Datasheet
Part HER305
Description 3.0AMPS High Efficient Rectifiers
Feature HER305; CREAT BY ART 3A, 50V - 800V High Efficient Rectifiers HER301 - HER307 Taiwan Semiconductor FEATURE.
Manufacture Taiwan Semiconductor
Datasheet
Download HER305 Datasheet




Taiwan Semiconductor HER305
CREAT BY ART
3A, 50V - 800V High Efficient Rectifiers
HER301 - HER307
Taiwan Semiconductor
FEATURES
- High efficiency, Low VF
- High current capability
- High reliability
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MECHANICAL DATA
Case: DO-204AC (DO-15)
DO-201AD
Molding compound, UL flammability classification rating 94V-0
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight: 1.2g (approximately)
ed MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25°C unless otherwise noted)
d PARAMETER
HER HER HER HER HER
SYMBOL
301 302 303 304 305
n Maximum repetitive peak reverse voltage
VRRM
50 100 200 300 400
e Maximum RMS voltage
VRMS
35 70 140 210 280
Maximum DC blocking voltage
VDC
50 100 200 300 400
m Maximum average forward rectified current
IF(AV)
3
Peak forward surge current, 8.3 ms single half sine-wave
m superimposed on rated load
IFSM
150
o Maximum instantaneous forward voltage (Note 1)
@3A
ec Maximum reverse current @ rated VR
TJ=25°C
TJ=125°C
R Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Not Typical thermal resistance
VF
IR
trr
CJ
RθJC
RθJL
RθJA
1.0
1.3
5
150
50
70
7
10
40
Operating junction temperature range
TJ
- 55 to +150
Storage temperature range
TSTG
- 55 to +150
Note 1: Pulse test with PW=300 μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V DC
HER
306
600
420
600
HER
307
800
560
800
1.7
75
50
UNIT
V
V
V
A
A
V
μA
ns
pF
°C/W
°C
°C
Document Number: DS_D0000108
Version: G15



Taiwan Semiconductor HER305
CREAT BY ART
ORDERING INFORMATION
PART NO. PACKING CODE
PACKING CODE
SUFFIX (*)
PACKAGE
A0
HER30x
(Note 1)
R0
B0
DO-201AD
G
DO-201AD
DO-201AD
Note 1: "x" defines voltage from 50V (HER301) to 1000V (HER307)
*: Optional available
HER301 - HER307
Taiwan Semiconductor
PACKING
500 / Ammo box
1,250 / 13" Paper reel
500 / Bulk packing
EXAMPLE
PREFERRED P/N PART NO.
HER307 A0G
HER307
PACKING CODE
A0
PACKING CODE
SUFFIX
G
DESCRIPTION
Green compound
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
d FIG.1 MAXIMUM FORWARD CURRENT
DERATING CURVE
e 4
nd 3
me 2
m 1
1000
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
100
TJ=100°C
10
TJ=75°C
1
eco 0
TJ=25°C
0.1
0
25
50
75
100
125
150
0
20
40
60
80 100 120 140
R AMBIENT TEMPERATURE (oC)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
ot FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
N 200
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
100
8.3ms Single Half Sine Wave
150
10
HER301-HER304
100
HER305
1
50
HER306-HER307
0
1
10
100
0.1
NUMBER OF CYCLES AT 60 Hz
0
0.2 0.4 0.6 0.8
1
1.2 1.4
FORWARD VOLTAGE (V)
Document Number: DS_D0000108
Version: G15



Taiwan Semiconductor HER305
CREAT BY ART
175
150
125
100
75
50
25
0
0.1
FIG. 5 TYPICAL JUNCTION CAPACITANCE
HER301-HER305
HER306-HER307
1
10
100
REVERSE VOLTAGE (V)
1000
HER301 - HER307
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
ended DO-201AD
DIM.
A
B
C
D
E
Unit (mm)
Min
Max
5.00 5.60
1.20 1.30
25.40
-
8.50 9.50
25.40
-
Unit (inch)
Min
Max
0.197 0.220
0.048 0.052
1.000
-
0.335 0.375
1.000
-
t Recomm MARKING DIAGRAM
NoP/N = Specific Device Code
G=
Green Compound
YWW = Date Code
F=
Factory Code
Document Number: DS_D0000108
Version: G15







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