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CGHV96050F1 Dataheets PDF



Part Number CGHV96050F1
Manufacturers CREE
Logo CREE
Description Input/Output Matched GaN HEMT
Datasheet CGHV96050F1 DatasheetCGHV96050F1 Datasheet (PDF)

CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Description Cree’s CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. .

  CGHV96050F1   CGHV96050F1


TS81001 CGHV96050F1 CMPA0060002F


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