CGHV96050F1
50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT
Description
Cree’s CGHV96050F1 is a gallium nitri...
CGHV96050F1
50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT
Description
Cree’s CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs
transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.
PN: CGHV96050F1 Package Type: 440210
Typical Performance Over 7.9 - 8.4 GHz (TC = 25˚C)
Parameter Linear Gain Output Power Power Gain Power Added Efficiency
7.9 GHz 17.0 22.4 15.6 30
8.0 GHz 16.7 28.2 15.0 37
8.1 GHz 16.4 28.2 15.1 37
8.2 GHz 15.9 31.6 14.5 39
8.3 GHz 15.2 31.6 14.0 38
8.4 GHz 14.6 31.6 13.2 37
Units dB W dB %
Note: Measured at -30 dBc, 1.6 MHz from carrier, in the CGHV96050F1-AMP (838176) under OQPSK modulation, 1.6 Msps, PN23, Alpha Filter = 0.2
Features
7.9 - 8.4 GHz Operation
80 W POUT typical >13 dB Power Gain
33% Typical PAE
50 Ohm Internally Matched
<0.1 dB Power Droop
Applications Satellite Communication Terrestrial Broadband
Large Signal Models Available for ADS and MWO Rev 2.2 - May 2020
4600 Silicon Drive | Durham, NC 27703...